Authors:
Roche, P
Palau, JM
Bruguier, G
Tavernier, C
Ecoffet, R
Gasiot, J
Citation: P. Roche et al., Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations, IEEE NUCL S, 46(6), 1999, pp. 1354-1362
Authors:
Lorfevre, E
Sagnes, B
Bruguier, G
Palau, JM
Gasiot, J
Calvet, MC
Ecoffet, R
Citation: E. Lorfevre et al., Cell design modifications to harden a N-channel power IGBT against Single Event Latchup, IEEE NUCL S, 46(6), 1999, pp. 1410-1414
Authors:
Roche, P
Palau, JM
Belhaddad, K
Bruguier, G
Ecoffet, R
Gasiot, J
Citation: P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543