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Citation: P. Roche et al., Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations, IEEE NUCL S, 46(6), 1999, pp. 1354-1362

Authors: Lorfevre, E Sagnes, B Bruguier, G Palau, JM Gasiot, J Calvet, MC Ecoffet, R

Citation: E. Lorfevre et al., Cell design modifications to harden a N-channel power IGBT against Single Event Latchup, IEEE NUCL S, 46(6), 1999, pp. 1410-1414

Authors: Roche, P Palau, JM Belhaddad, K Bruguier, G Ecoffet, R Gasiot, J

Citation: P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543