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Citation: S. Guha et al., High-quality aluminum oxide gate dielectrics by ultra-high-vacuum reactiveatomic-beam deposition, J APPL PHYS, 90(1), 2001, pp. 512-514

Authors: Kiflawi, I Bruley, J

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Citation: J. Bruley et al., An EELS study of segregation-induced grain-boundary embrittlement of copper, ACT MATER, 47(15-16), 1999, pp. 4009-4017

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