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Results:
1-7
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Results: 7
Authors:
Narvaez, GA
Hawrylak, P
Brum, JA
Citation: Ga. Narvaez et al., The role of finite hole mass in the negatively charged exciton in two dimensions, PHYSICA E, 9(4), 2001, pp. 716-722
Authors:
Tudury, HAP
Nakaema, MKK
Iikawa, R
Brum, JA
Ribeiro, E
Carvalho, W
Bernussi, AA
Gobbi, AL
Citation: Hap. Tudury et al., Strain-dependent optical emission in In1-xGaxAs/InP quantum wells - art. no. 153301, PHYS REV B, 6415(15), 2001, pp. 3301
Authors:
Aguiar, MCD
Brum, JA
Citation: Mcd. Aguiar et Ja. Brum, Effects of the heavy- and light-hole mixing in the exciton dynamics in semiconductor quantum wells, PHYS ST S-A, 178(1), 2000, pp. 89-93
Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well
Authors:
Triques, ALC
Iikawa, F
Brum, JA
Maialle, MZ
Pereira, RG
Borghs, G
Citation: Alc. Triques et al., Carrier spin polarization near the Fermi level in n-modulation doped AlGaAs/InGaAs/GaAs quantum well, SUPERLATT M, 25(3), 1999, pp. 551-554
Authors:
Rasnik, I
Rego, LGC
Marquezini, MV
Triques, ALC
Brasil, MJSP
Brum, JA
Cotta, MA
Citation: I. Rasnik et al., Confinement versus localization for quantum wells and quantum wires in a self-assembled structure, SUPERLATT M, 25(1-2), 1999, pp. 137-141
Authors:
Triques, ALC
Urdanivia, J
Iikawa, F
Maialle, MZ
Brum, JA
Borhgs, G
Citation: Alc. Triques et al., Electron-spin polarization near the Fermi level in n-type modulation-dopedsemiconductor quantum wells, PHYS REV B, 59(12), 1999, pp. R7813-R7816
Authors:
Kerridge, GC
Greally, MG
Hayne, M
Usher, A
Plaut, AS
Brum, JA
Holland, MC
Stanley, CR
Citation: Gc. Kerridge et al., Optical detection of charge redistribution in a delta modulation-doped GaAs-AlxGa1-xAs heterojunction, SOL ST COMM, 109(4), 1999, pp. 267-271
Risultati:
1-7
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