AAAAAA
Results:
1-19
|
Results: 19
Authors:
Bulatov, VV
Justo, JF
Cai, W
Yip, S
Argon, AS
Lenosky, T
de Koning, M
de la Rubia, TD
Citation: Vv. Bulatov et al., Parameter-free modelling of dislocation motion: the case of silicon, PHIL MAG A, 81(5), 2001, pp. 1257-1281
Authors:
Rhee, M
Lassila, DH
Bulatov, VV
Hsiung, L
de la Rubia, TD
Citation: M. Rhee et al., Dislocation multiplication in bcc molybdenum: a dislocation dynamics simulation, PHIL MAG L, 81(9), 2001, pp. 595-605
Authors:
Justo, JF
de Koning, M
Cai, W
Bulatov, VV
Citation: Jf. Justo et al., Point defect interaction with dislocations in silicon, MAT SCI E A, 309, 2001, pp. 129-132
Authors:
Lu, G
Kioussis, N
Bulatov, VV
Kaxiras, E
Citation: G. Lu et al., Dislocation core properties of aluminum: a first-principles study, MAT SCI E A, 309, 2001, pp. 142-147
Authors:
Chang, JP
Cai, W
Bulatov, VV
Yip, S
Citation: Jp. Chang et al., Dislocation motion in BCC metals by molecular dynamics, MAT SCI E A, 309, 2001, pp. 160-163
Authors:
Cai, W
Bulatov, VV
Yip, S
Argon, AS
Citation: W. Cai et al., Kinetic Monte Carlo modeling of dislocation motion in BCC metals, MAT SCI E A, 309, 2001, pp. 270-273
Authors:
Rhee, M
Stolken, JS
Bulatov, VV
de la Rubia, TD
Zbib, HM
Hirth, JP
Citation: M. Rhee et al., Dislocation stress fields for dynamic codes using anisotropic elasticity: methodology and analysis, MAT SCI E A, 309, 2001, pp. 288-293
Authors:
de la Rubia, TD
Bulatov, VV
Citation: Td. De La Rubia et Vv. Bulatov, Materials research by means of multiscale computer simulation, MRS BULL, 26(3), 2001, pp. 169-175
Authors:
Bulatov, VV
Tang, MJ
Zbib, HM
Citation: Vv. Bulatov et al., Crystal plasticity from dislocation dynamics, MRS BULL, 26(3), 2001, pp. 191-195
Authors:
Cai, W
Bulatov, VV
Chang, JP
Li, J
Yip, S
Citation: W. Cai et al., Anisotropic elastic interactions of a periodic dislocation array, PHYS REV L, 86(25), 2001, pp. 5727-5730
Authors:
Lenosky, TJ
Sadigh, B
Alonso, E
Bulatov, VV
de la Rubia, TD
Kim, J
Voter, AF
Kress, JD
Citation: Tj. Lenosky et al., Highly optimized empirical potential model of silicon, MODEL SIM M, 8(6), 2000, pp. 825-841
Authors:
Lu, G
Kioussis, N
Bulatov, VV
Kaxiras, E
Citation: G. Lu et al., The Peierls-Nabarro model revisited, PHIL MAG L, 80(10), 2000, pp. 675-682
Authors:
Lu, G
Kioussis, N
Bulatov, VV
Kaxiras, E
Citation: G. Lu et al., Generalized-stacking-fault energy surface and dislocation properties of aluminum, PHYS REV B, 62(5), 2000, pp. 3099-3108
Authors:
Cai, W
de Koning, M
Bulatov, VV
Yip, S
Citation: W. Cai et al., Minimizing boundary reflections in coupled-domain simulations, PHYS REV L, 85(15), 2000, pp. 3213-3216
Authors:
Cai, W
Bulatov, VV
Justo, JF
Argon, AS
Yip, S
Citation: W. Cai et al., Intrinsic mobility of a dissociated Dislocation in silicon, PHYS REV L, 84(15), 2000, pp. 3346-3349
Authors:
Justo, JF
de Koning, M
Cai, W
Bulatov, VV
Citation: Jf. Justo et al., Vacancy interaction with dislocations in silicon: The shuffle-glide competition, PHYS REV L, 84(10), 2000, pp. 2172-2175
Authors:
Bulatov, VV
Richmond, O
Glazov, MV
Citation: Vv. Bulatov et al., An atomistic dislocation mechanism of pressure-dependent plastic flow in aluminum, ACT MATER, 47(12), 1999, pp. 3507-3514
Authors:
Justo, JF
Bulatov, VV
Yip, S
Citation: Jf. Justo et al., Dislocation core reconstruction and its effect on dislocation mobility in silicon, J APPL PHYS, 86(8), 1999, pp. 4249-4257
Authors:
Bulatov, VV
Kubin, LP
Citation: Vv. Bulatov et Lp. Kubin, Dislocation modelling at atomistic and mesoscopic scales, CURR OP SOL, 3(6), 1998, pp. 558-561
Risultati:
1-19
|