Authors: Clark, WF Ference, TG Mittl, SW Burnham, JS Adams, ED

Citation: Wf. Clark et al., Improved hot-electron reliability in high-performance, multilevel-metal CMOS using deuterated barrier-nitride processing, IEEE ELEC D, 20(10), 1999, pp. 501-503

Authors: Clark, WF Ference, TG Hook, TB Watson, KM Mittl, SW Burnham, JS

Citation: Wf. Clark et al., Process stability of deuterium-annealed MOSFET's, IEEE ELEC D, 20(1), 1999, pp. 48-50

Authors: Ference, TG Burnham, JS Clark, WF Hook, TB Mittl, SW Watson, KM Han, LKK

Citation: Tg. Ference et al., The combined effects of deuterium anneals and deuterated barrier-nitride processing on hot-electron degradation in MOSFET's, IEEE DEVICE, 46(4), 1999, pp. 747-753

Authors: Hook, TB Burnham, JS Bolam, RJ

Citation: Tb. Hook et al., Nitrided gate oxides for 3.3-V logic application: Reliability and device design considerations, IBM J RES, 43(3), 1999, pp. 393-406