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Results: 1-11 |
Results: 11
Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon
Authors: Chambers, JJ Busch, BW Schulte, WH Gustafsson, T Garfunkel, E Wang, S Maher, DM Klein, TM Parsons, GN
Citation: Jj. Chambers et al., Effects of surface pretreatments on interface structure during formation of ultra-thin yttrium silicate dielectric films on silicon, APPL SURF S, 181(1-2), 2001, pp. 78-93
Limitations to depth resolution in ion scattering experiments
Authors: Schulte, WH Busch, BW Garfunkel, E Gustafsson, T Schiwietz, G Grande, PL
Citation: Wh. Schulte et al., Limitations to depth resolution in ion scattering experiments, NUCL INST B, 183(1-2), 2001, pp. 16-24
Layer-resolved depth profiling at single crystal surfaces
Authors: Busch, BW Schulte, WH Gustafsson, T Uebing, C
Citation: Bw. Busch et al., Layer-resolved depth profiling at single crystal surfaces, NUCL INST B, 183(1-2), 2001, pp. 88-96
High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering
Authors: Gustafsson, T Lu, HC Busch, BW Schulte, WH Garfunkel, E
Citation: T. Gustafsson et al., High-resolution depth profiling of ultrathin gate oxides using medium-energy ion scattering, NUCL INST B, 183(1-2), 2001, pp. 146-153
Rocksalt CrC formation on the Fe-15% Cr(100) surface - art. no. 115427
Authors: Busch, BW Uebing, C Gustafsson, T
Citation: Bw. Busch et al., Rocksalt CrC formation on the Fe-15% Cr(100) surface - art. no. 115427, PHYS REV B, 6411(11), 2001, pp. 5427
Interface reactions of high-kappa Y2O3 gate oxides with Si
Authors: Busch, BW Kwo, J Hong, M Mannaerts, JP Sapjeta, BJ Schulte, WH Garfunkel, E Gustafsson, T
Citation: Bw. Busch et al., Interface reactions of high-kappa Y2O3 gate oxides with Si, APPL PHYS L, 79(15), 2001, pp. 2447-2449
Oxygen exchange and transport in thin zirconia films on Si(100)
Authors: Busch, BW Schulte, WH Garfunkel, E Gustafsson, T Qi, W Nieh, R Lee, J
Citation: Bw. Busch et al., Oxygen exchange and transport in thin zirconia films on Si(100), PHYS REV B, 62(20), 2000, pp. R13290-R13293
Thermal expansion and mean-square displacements of the Al(110) surface studied with medium-energy ion scattering
Authors: Busch, BW Gustafsson, T
Citation: Bw. Busch et T. Gustafsson, Thermal expansion and mean-square displacements of the Al(110) surface studied with medium-energy ion scattering, PHYS REV B, 61(23), 2000, pp. 16097-16104
Medium-energy ion scattering study of arsenic and sulfur segregation to the Fe-9% W(100) surface
Authors: Busch, BW Gustafsson, T Viefhaus, H Uebing, C
Citation: Bw. Busch et al., Medium-energy ion scattering study of arsenic and sulfur segregation to the Fe-9% W(100) surface, SURF SCI, 463(2), 2000, pp. 145-155
Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon
Authors: Lu, HC Gusev, EP Garfunkel, E Busch, BW Gustafsson, T Sorsch, TW Green, ML
Citation: Hc. Lu et al., Isotopic labeling studies of interactions of nitric oxide and nitrous oxide with ultrathin oxynitride layers on silicon, J APPL PHYS, 87(3), 2000, pp. 1550-1555
Competition of arsenic and sulfur segregation on Fe-9%W(100) single crystal surfaces
Authors: Busch, BW Gustafsson, T Uebing, C
Citation: Bw. Busch et al., Competition of arsenic and sulfur segregation on Fe-9%W(100) single crystal surfaces, APPL PHYS L, 74(23), 1999, pp. 3564-3566
Risultati: 1-11 |