Citation: P. Ho et al., Modeling the plasma chemistry of C2F6 and CHF3 etching of silicon dioxide,with comparisons to etch rate and diagnostic data, J VAC SCI A, 19(5), 2001, pp. 2344-2367
Authors:
Hebner, GA
Riley, ME
Johnson, DS
Ho, P
Buss, RJ
Citation: Ga. Hebner et al., Direct determination of particle-particle interactions in a 2D plasma dustcrystal - art. no. 235001, PHYS REV L, 8723(23), 2001, pp. 5001
Citation: Me. Coltrin et al., Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS), THIN SOL FI, 365(2), 2000, pp. 251-263