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Results: 1-8 |
Results: 8

Authors: Eymery, J Rieutord, F Fournel, F Buttard, D Moriceau, H
Citation: J. Eymery et al., X-ray reflectivity of silicon on insulator wafers, MAT SC S PR, 4(1-3), 2001, pp. 31-33

Authors: Rieutord, F Eymery, J Fournel, F Buttard, D Oeser, R Plantevin, O Moriceau, H Aspar, B
Citation: F. Rieutord et al., High-energy x-ray reflectivity of buried interfaces created by wafer bonding - art. no. 125408, PHYS REV B, 6312(12), 2001, pp. 5408

Authors: Buttard, D Eymery, J Rieutord, F Fournel, F Lubbert, D Baumbach, T Moriceau, H
Citation: D. Buttard et al., Grazing incidence X-ray studies of twist-bonded Si/Si and Si/SiO2 interfaces, PHYSICA B, 283(1-3), 2000, pp. 103-107

Authors: Fournel, F Moriceau, H Magnea, N Eymery, J Buttard, D Rouviere, JL Rousseau, K Aspar, B
Citation: F. Fournel et al., Nanometric patterning with ultrathin twist bonded silicon wafers, THIN SOL FI, 380(1-2), 2000, pp. 10-14

Authors: Barski, A Derivaz, M Rouviere, JL Buttard, D
Citation: A. Barski et al., Epitaxial growth of germanium dots on Si(001) surface covered by a very thin silicon oxide layer, APPL PHYS L, 77(22), 2000, pp. 3541-3543

Authors: Buttard, D Dolino, G Bellet, D Baumbach, T Rieutord, F
Citation: D. Buttard et al., X-ray reflectivity investigation of thin p-type porous silicon layers, SOL ST COMM, 109(1), 1999, pp. 1-5

Authors: Buttard, D Dolino, G Faivre, C Halimaoui, A Comin, F Formoso, V Ortega, L
Citation: D. Buttard et al., Porous silicon strain during in situ ultrahigh vacuum thermal annealing, J APPL PHYS, 85(10), 1999, pp. 7105-7111

Authors: Eymery, J Fournel, F Rieutord, F Buttard, D Moriceau, H Aspar, B
Citation: J. Eymery et al., X-ray reflectivity of ultrathin twist-bonded silicon wafers, APPL PHYS L, 75(22), 1999, pp. 3509-3511
Risultati: 1-8 |