AAAAAA

   
Results: 1-4 |
Results: 4

Authors: BENCHIMOL JL MBA J DUCHENOIS AM SERMAGE B LAUNAY P CAFFIN D MEGHELLI M JUHEL M
Citation: Jl. Benchimol et al., CBE GROWTH OF CARBON-DOPED INGAAS INP HBTS FOR 25 GBIT/S CIRCUITS/, Journal of crystal growth, 188(1-4), 1998, pp. 349-354

Authors: CAFFIN D BESOMBES C BRESSE JF LEGAY P LEROUX G PATRIARCHE G LAUNAY P
Citation: D. Caffin et al., BASE METALLIZATION STABILITY IN INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS INFLUENCE ON LEAKAGE CURRENTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 854-861

Authors: CAFFIN D DUCHENOIS AM HELIOT F BESOMBES C BENCHIMOL JL LAUNAY P
Citation: D. Caffin et al., BASE-COLLECTOR LEAKAGE CURRENTS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 930-936

Authors: CAFFIN D BOUCHE M MEGHELLI M DUCHENOIS AM LAUNAY P
Citation: D. Caffin et al., INP INGAAS DOUBLE-HBT TECHNOLOGY FOR HIGH BIT-RATE COMMUNICATION CIRCUITS/, Electronics Letters, 33(2), 1997, pp. 149-151
Risultati: 1-4 |