Authors:
BENCHIMOL JL
MBA J
DUCHENOIS AM
SERMAGE B
LAUNAY P
CAFFIN D
MEGHELLI M
JUHEL M
Citation: Jl. Benchimol et al., CBE GROWTH OF CARBON-DOPED INGAAS INP HBTS FOR 25 GBIT/S CIRCUITS/, Journal of crystal growth, 188(1-4), 1998, pp. 349-354
Authors:
CAFFIN D
BESOMBES C
BRESSE JF
LEGAY P
LEROUX G
PATRIARCHE G
LAUNAY P
Citation: D. Caffin et al., BASE METALLIZATION STABILITY IN INP INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND ITS INFLUENCE ON LEAKAGE CURRENTS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 854-861
Authors:
CAFFIN D
DUCHENOIS AM
HELIOT F
BESOMBES C
BENCHIMOL JL
LAUNAY P
Citation: D. Caffin et al., BASE-COLLECTOR LEAKAGE CURRENTS IN INP INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS/, I.E.E.E. transactions on electron devices, 44(6), 1997, pp. 930-936