Authors: MURAD SK CAMERON NI BEAUMONT SP WILKINSON CDW

Citation: Sk. Murad et al., EFFECTS OF O-2 ADDITION TO SICL4 SIF4 AND THE THICKNESS OF THE CAPPING LAYER ON GATE RECESS ETCHING OF GAAS-PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3668-3673

Authors: CAMERON NI MURAD S MCLELLAND H ASENOV A TAYLOR MRS HOLLAND MC BEAUMONT SP

Citation: Ni. Cameron et al., GATE RECESS ENGINEERING OF PSEUDOMORPHIC IN0.30GAAS GAAS HEMTS/, Electronics Letters, 32(8), 1996, pp. 770-772

Authors: MURAD SK WANG PD CAMERON NI BEAUMONT SP WILKINSON CDW

Citation: Sk. Murad et al., DAMAGE-FREE AND SELECTIVE RIE OF GAAS ALGAAS IN SICL4/SIF4 PLASMA FORMESFET AND PSEUDOMORPHIC HEMTS GATE RECESS ETCHING/, Microelectronic engineering, 27(1-4), 1995, pp. 439-444

Authors: THAYNE IG ELGAID K TAYLOR MRS HOLLAND MC FAIRBAIRN S CAMERON NI BEAUMONT SP BELLE G

Citation: Ig. Thayne et al., LOW-FREQUENCY NOISE OF SELECTIVELY DRY-ETCH GATE-RECESSED GAAS-MESFETS, Electronics Letters, 31(4), 1995, pp. 324-326

Authors: CAMERON NI FERGUSON S TAYLOR MRS BEAUMONT SP HOLLAND M TRONCHE C SOULARD M LADBROOKE PH

Citation: Ni. Cameron et al., SELECTIVELY DRY GATE RECESSED GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS, HIGH-ELECTRON-MOBILITY TRANSISTORS, AND MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2244-2248