Authors: SINHA SP ZALESKI A IOANNOU DE CAMPISI GJ HUGHES HL

Citation: Sp. Sinha et al., HOT HOLE INDUCED INTERFACE STATE GENERATION AND ANNIHILATION IN SOI MOSFETS, IEEE electron device letters, 17(3), 1996, pp. 121-123

Authors: KRSKA JHY YOON JU NEE JT ROITMAN P CAMPISI GJ BROWN GA CHUNG JE

Citation: Jhy. Krska et al., A MODEL FOR SIMOX BURIED-OXIDE HIGH-FIELD CONDUCTION, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1956-1964

Authors: SINHA SP ZALESKI A IOANNOU DE CAMPISI GJ HUGHES HL

Citation: Sp. Sinha et al., IN-DEPTH ANALYSIS OF OPPOSITE CHANNEL BASED CHARGE INJECTION IN SOI MOSFETS AND RELATED DEFECT CREATION AND ANNIHILATION, Microelectronic engineering, 28(1-4), 1995, pp. 383-386

Authors: ZALESKI A SINHA SP IOANNOU DE CAMPISI GJ HUGHES HL

Citation: A. Zaleski et al., OPPOSITE-CHANNEL-BASED CHARGE INJECTION IN SOI MOSFETS UNDER HOT-CARRIER STRESS, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1697-1700

Authors: ZALESKI A IOANNOU DE CAMPISI GJ HUGHES HL

Citation: A. Zaleski et al., SUCCESSIVE CHARGING DISCHARGING OF GATE OXIDES IN SOI MOSFETS BY SEQUENTIAL HOT-ELECTRON STRESSING OF FRONT BACK CHANNEL, IEEE electron device letters, 14(9), 1993, pp. 435-437

Authors: ZALESKI A IOANNOU DE CAMPISI GJ HUGHES HL

Citation: A. Zaleski et al., MECHANISMS OF HOT-CARRIER-INDUCED DEGRADATION OF SOI (SIMOX) MOSFETS, Microelectronic engineering, 22(1-4), 1993, pp. 403-406