Citation: Tb. Boykin et al., INADEQUACY OF THE ONE-DIMENSIONAL APPROXIMATION FOR RESONANT-TUNNELING-DIODE CURRENT-VOLTAGE CALCULATIONS, Physical review. B, Condensed matter, 51(4), 1995, pp. 2273-2281
Authors:
NOGARET A
MAUDE DK
PORTAL JC
MALDONADO MA
MARTIN KP
CARNAHAN RE
HIGGINS RJ
LEE H
CHO AY
Citation: A. Nogaret et al., INFLUENCE OF ELECTRODE FERMI ENERGY ON INTERBAND TUNNELING, Physical review. B, Condensed matter, 51(19), 1995, pp. 13198-13202
Authors:
CARNAHAN RE
MARTIN KP
HIGGINS RJ
PARK BG
WOLAK E
LEAR KL
HARRIS JS
Citation: Re. Carnahan et al., GAMMA-X INTERVALLEY TUNNELING IN A GAAS ALAS RESONANT-TUNNELING DIODEUNDER UNIAXIAL-STRESS, Semiconductor science and technology, 9(5), 1994, pp. 500-503
Citation: Tb. Boykin et al., VALIDITY OF THE SEMICLASSICAL INTERPRETATION OF RESONANT MAGNETOTUNNELING SPECTROSCOPY EXPERIMENTS, Physical review. B, Condensed matter, 50(20), 1994, pp. 15393-15396
Authors:
CARNAHAN RE
MALDONADO MA
MARTIN KP
HIGGINS RJ
VANDERWAGT JPA
HARRIS JS
Citation: Re. Carnahan et al., OBSERVATION OF RESONANT-TUNNELING THROUGH LOCALIZED CONTINUUM STATES IN ELECTRON-WAVE INTERFERENCE DIODES, Applied physics letters, 64(18), 1994, pp. 2403-2405
Authors:
NOGARET A
MALDONADO MA
CARNAHAN RE
MARTIN KP
HIGGINS RJ
ARISTONE F
MAUDE DK
PORTAL JC
CHEN JF
CHO AY
Citation: A. Nogaret et al., RESONANT AND OFF-RESONANT PHENOMENA IN DOUBLE-BARRIER INTERBAND TUNNELING STRUCTURES, Physical review. B, Condensed matter, 47(20), 1993, pp. 13872-13875