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Results: 1-17 |
Results: 17
SIC DEVICE TECHNOLOGY - REMAINING ISSUES
Authors: PALMOUR JW LIPKIN LA SINGH R SLATER DB SUVOROV AV CARTER CH
Citation: Jw. Palmour et al., SIC DEVICE TECHNOLOGY - REMAINING ISSUES, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1400-1404
SIC-SEEDED CRYSTAL-GROWTH
Authors: GLASS RC HENSHALL D TSVETKOV VF CARTER CH
Citation: Rc. Glass et al., SIC-SEEDED CRYSTAL-GROWTH, MRS bulletin, 22(3), 1997, pp. 30-35
4H-SIC MESFET WITH 65.7-PERCENT POWER ADDED EFFICIENCY AT 850 MHZ
Authors: MOORE KE WEITZEL CE NORDQUIST KJ POND LL PALMOUR JW ALLEN S CARTER CH
Citation: Ke. Moore et al., 4H-SIC MESFET WITH 65.7-PERCENT POWER ADDED EFFICIENCY AT 850 MHZ, IEEE electron device letters, 18(2), 1997, pp. 69-70
SIC SEEDED CRYSTAL-GROWTH
Authors: GLASS RC HENSHALL D TSVETKOV VF CARTER CH
Citation: Rc. Glass et al., SIC SEEDED CRYSTAL-GROWTH, Physica status solidi. b, Basic research, 202(1), 1997, pp. 149-162
SCHOTTKY BARRIERS ON N-GAN GROWN ON SIC
Authors: KALININA EV KUZNETSOV NI DMITRIEV VA IRVINE KG CARTER CH
Citation: Ev. Kalinina et al., SCHOTTKY BARRIERS ON N-GAN GROWN ON SIC, Journal of electronic materials, 25(5), 1996, pp. 831-834
SILICON-CARBIDE HIGH-POWER DEVICES
Authors: WEITZEL CE PALMOUR JW CARTER CH MOORE K NORDQUIST KJ ALLEN S THERO C BHATNAGAR M
Citation: Ce. Weitzel et al., SILICON-CARBIDE HIGH-POWER DEVICES, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1732-1741
ELECTRIC BREAKDOWN IN GAN P-N-JUNCTIONS
Authors: DMITRIEV VA IRVINE KG CARTER CH KUZNETSOV NI KALININA EV
Citation: Va. Dmitriev et al., ELECTRIC BREAKDOWN IN GAN P-N-JUNCTIONS, Applied physics letters, 68(2), 1996, pp. 229-231
EFFECTS OF GRAIN-SORGHUM (SORGHUM-BICOLOR) HERBICIDES ON CHARCOAL ROTFUNGUS
Authors: RUSSIN JS CARTER CH GRIFFIN JL
Citation: Js. Russin et al., EFFECTS OF GRAIN-SORGHUM (SORGHUM-BICOLOR) HERBICIDES ON CHARCOAL ROTFUNGUS, Weed technology, 9(2), 1995, pp. 343-351
WHITE-BEAM SYNCHROTRON TOPOGRAPHIC STUDIES OF DEFECTS IN 6H-SIC SINGLE-CRYSTALS
Authors: DUDLEY M WANG SP HUANG W CARTER CH TSVETKOV VF FAZI C
Citation: M. Dudley et al., WHITE-BEAM SYNCHROTRON TOPOGRAPHIC STUDIES OF DEFECTS IN 6H-SIC SINGLE-CRYSTALS, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 63-68
SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC
Authors: ZUBRILOV AS NIKOLAEV VI TSVETKOV DV DMITRIEV VA IRVINE KG EDMOND JA CARTER CH
Citation: As. Zubrilov et al., SPONTANEOUS AND STIMULATED-EMISSION FROM PHOTOPUMPED GAN GROWN ON SIC, Applied physics letters, 67(4), 1995, pp. 533-535
ALGAN PN JUNCTIONS
Authors: DMITRIEV VA IRVINE K CARTER CH ZUBRILOV AS TSVETKOV DV
Citation: Va. Dmitriev et al., ALGAN PN JUNCTIONS, Applied physics letters, 67(1), 1995, pp. 115-117
A VERTICALLY INTEGRATED BIPOLAR STORAGE CELL IN 6H SILICON-CARBIDE FOR NONVOLATILE MEMORY APPLICATIONS
Authors: XIE W COOPER JA MELLOCH MR PALMOUR JW CARTER CH
Citation: W. Xie et al., A VERTICALLY INTEGRATED BIPOLAR STORAGE CELL IN 6H SILICON-CARBIDE FOR NONVOLATILE MEMORY APPLICATIONS, IEEE electron device letters, 15(6), 1994, pp. 212-214
4H-SIC MESFET WITH 2.8-W MM POWER-DENSITY AT 1.8-GHZ/
Authors: WEITZEL CE PALMOUR JW CARTER CH NORDQUIST KJ
Citation: Ce. Weitzel et al., 4H-SIC MESFET WITH 2.8-W MM POWER-DENSITY AT 1.8-GHZ/, IEEE electron device letters, 15(10), 1994, pp. 406-408
SCANNING-TUNNELING-MICROSCOPY WITH A LARGE-GAP SEMICONDUCTOR TIP
Authors: PACKARD WE DOW JD ROHRER H PALMOUR JW CARTER CH NICOLAIDES R
Citation: We. Packard et al., SCANNING-TUNNELING-MICROSCOPY WITH A LARGE-GAP SEMICONDUCTOR TIP, Europhysics letters, 26(2), 1994, pp. 97-102
BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC
Authors: EDMOND JA KONG HS CARTER CH
Citation: Ja. Edmond et al., BLUE LEDS, UV PHOTODIODES AND HIGH-TEMPERATURE RECTIFIERS IN 6H-SIC, Physica. B, Condensed matter, 185(1-4), 1993, pp. 453-460
6H-SILICON CARBIDE DEVICES AND APPLICATIONS
Authors: PALMOUR JW EDMOND JA KONG HS CARTER CH
Citation: Jw. Palmour et al., 6H-SILICON CARBIDE DEVICES AND APPLICATIONS, Physica. B, Condensed matter, 185(1-4), 1993, pp. 461-465
DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES
Authors: PALMOUR JW EDMOND JA CARTER CH
Citation: Jw. Palmour et al., DEMONSTRATING THE POTENTIAL OF 6H-SILICON CARBIDE FOR POWER DEVICES, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2129-2130
Risultati: 1-17 |