AAAAAA
Results:
1-22
|
Results: 22
Authors:
NAVA F
VANNI P
CAVALLINI A
CASTALDINI A
CANALI C
QUARANTA AA
LANZIERI C
Citation: F. Nava et al., PROTON-INDUCED BULK DAMAGE EFFECTS IN GALLIUM-ARSENIDE DETECTORS, Nuclear physics. B, 1998, pp. 432-437
Authors:
CASTALDINI A
CAVALLINI A
POLENTA L
CANALI C
NAVA F
Citation: A. Castaldini et al., ANALYSIS OF THE ACTIVE LAYER IN SI GAAS SCHOTTKY DIODES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 410(1), 1998, pp. 79-84
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
FERNANDEZ P
PIQUERAS J
Citation: A. Castaldini et al., DEEP ENERGY-LEVELS IN CDTE AND CDZNTE, Journal of applied physics, 83(4), 1998, pp. 2121-2126
Authors:
CHIOSSI C
NAVA F
CANALI C
DAURIA S
DELPAPA C
CASTALDINI A
CAVALLINI A
LANZIERI C
Citation: C. Chiossi et al., PROTON RADIATION EFFECTS ON SI LEC GAAS DETECTOR PERFORMANCES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 379-382
Authors:
CASTALDINI A
CAVALLINI A
POLENTA L
CANALI C
DELPAPA C
NAVA F
Citation: A. Castaldini et al., THE ROLE OF THE OHMIC CONTACT ON THE EFFICIENCY OF GALLIUM-ARSENIDE RADIATION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 388(3), 1997, pp. 417-420
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
FERNANDEZ P
PIQUERAS J
Citation: A. Castaldini et al., MIDGAP TRAPS RELATED TO COMPENSATION PROCESSES IN CDTE ALLOYS, Physical review. B, Condensed matter, 56(23), 1997, pp. 14897-14900
Authors:
CASTALDINI A
CAVALLINI A
POLENTA L
CANALI C
DELPAPA C
NAVA F
Citation: A. Castaldini et al., ELECTRIC-FIELD BEHAVIOR AND CHARGE-DENSITY DISTRIBUTION IN SEMIINSULATING GALLIUM-ARSENIDE SCHOTTKY DIODES, Physical review. B, Condensed matter, 56(15), 1997, pp. 9201-9204
Authors:
NAVA F
BERTUCCIO G
VANNI P
CANALI C
CAVALLINI A
CASTALDINI A
POLENTA L
Citation: F. Nava et al., IMPROVED PERFORMANCE OF GAAS RADIATION DETECTORS WITH LOW-TEMPERATUREOHMIC CONTACTS, IEEE transactions on nuclear science, 44(3), 1997, pp. 943-949
Authors:
CASTALDINI A
CAVALLINI A
POGGI A
SUSI E
Citation: A. Castaldini et al., SURFACE DAMAGE IN PROCESSED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 249-253
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
POLENTA L
FERNANDEZ P
PIQUERAS J
Citation: A. Castaldini et al., COMPENSATION AND DEEP LEVELS IN II-VI COMPOUNDS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 302-305
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
POLENTA L
FERNANDEZ P
PIQUERAS J
Citation: A. Castaldini et al., CATHODOLUMINESCENCE AND PHOTOINDUCED CURRENT SPECTROSCOPY STUDIES OF DEFECTS IN CD0.8ZN0.2TE, Physical review. B, Condensed matter, 54(11), 1996, pp. 7622-7625
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
FERNANDEZ P
PIQUERAS J
Citation: A. Castaldini et al., COMPARISON OF ELECTRICAL AND LUMINESCENCE DATA FOR THE A-CENTER IN CDTE, Applied physics letters, 69(23), 1996, pp. 3510-3512
Authors:
ALIETTI M
CANALI C
CASTALDINI A
CAVALLINI A
CHIOSSI C
DELPAPA C
FUOCHI G
LANZIERI C
NAVA F
VANNI P
Citation: M. Alietti et al., PHOTON RADIATION-DAMAGE IN HIGH-PURITY SILICON AND LEC SI GALLIUM-ARSENIDE DETECTORS, Nuclear physics. B, 1995, pp. 531-535
Authors:
ALIETTI M
CANALI C
CASTALDINI A
CAVALLINI A
CETRONIO A
CHIOSSI C
DAURIA S
DELPAPA C
LANZIERI C
NAVA F
VANNI P
Citation: M. Alietti et al., PERFORMANCE OF A NEW OHMIC CONTACT FOR GAAS PARTICLE DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 362(2-3), 1995, pp. 344-348
Authors:
ALIETTI M
BERLUTI L
CANALI C
CASTALDINI A
CAVALLINI A
CETRONIO A
RINALDI P
DAURIA S
DELPAPA C
LANZIERI C
NAVA F
PROIA M
ZICHICHI A
Citation: M. Alietti et al., AN OPTICAL-BEAM-INDUCED-CURRENT STUDY OF ACTIVE-REGION AND CHARGE COLLECTION EFFICIENCY OF GAAS PARTICLE DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 355(2-3), 1995, pp. 420-424
Authors:
BERLUTI L
CANALI C
CASTALDINI A
CAVALLINI A
CETRONIO A
DAURIA S
DELPAPA C
LANZIERI C
MATTEI G
NAVA F
PROIA M
RINALDI P
ZICHICHI A
Citation: L. Berluti et al., GALLIUM-ARSENIDE PARTICLE DETECTORS - A STUDY OF THE ACTIVE-REGION AND CHARGE-COLLECTION EFFICIENCY, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 354(2-3), 1995, pp. 364-367
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
PIQUERAS J
Citation: A. Castaldini et al., THE EL2 TRAP IN HIGHLY DOPED GAAS202-TE, Journal of applied physics, 78(11), 1995, pp. 6592-6595
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
PIQUERAS J
Citation: A. Castaldini et al., JUNCTION SPECTROSCOPY OF HIGHLY DOPED GAAS - DETECTION OF THE EL2 TRAP, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 397-399
OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON
Authors:
CASTALDINI A
CAVALLINI A
EVANS JH
HAWKINS ID
PEAKER AR
VANDINI M
Citation: A. Castaldini et al., OPTICAL CHARACTERIZATION OF DEEP STATES ASSOCIATED WITH OXIDATION-INDUCED STACKING-FAULTS IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 170-174
Authors:
CASTALDINI A
CAVALLINI A
DELPAPA C
ALIETTI M
CANALI C
NAVA F
LANZIERI C
Citation: A. Castaldini et al., BIAS DEPENDENCE OF THE DEPLETION LAYER WIDTH IN SEMIINSULATING GAAS BY CHARGE COLLECTION SCANNING MICROSCOPY, Scanning microscopy, 8(4), 1994, pp. 969-978
Authors:
NAVA F
CANALI C
CASTALDINI A
CAVALLINI A
DAURIA S
DELPAPA C
FRIGERI C
ZANOTTI L
CETRONIO A
LANZIERI C
ZICHICHI A
Citation: F. Nava et al., INFLUENCE OF ELECTRON TRAPS ON CHARGE-COLLECTION EFFICIENCY IN GAAS RADIATION DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 349(1), 1994, pp. 156-159
Authors:
CASTALDINI A
CAVALLINI A
FRABONI B
MENDEZ B
PIQUERAS J
Citation: A. Castaldini et al., SPATIAL-DISTRIBUTION OF RECOMBINATION CENTERS IN GAASTE - EFFECTS OF THE DOPING LEVEL, Journal of applied physics, 76(2), 1994, pp. 987-992
Risultati:
1-22
|