Authors:
VYVODA MA
LEE H
MALYSHEV MV
KLEMENS FP
CERULLO M
DONNELLY VM
GRAVES DB
KORNBLIT A
LEE JTC
Citation: Ma. Vyvoda et al., EFFECTS OF PLASMA CONDITIONS ON THE SHAPES OF FEATURES ETCHED IN CL-2AND HBR PLASMAS - I - BULK CRYSTALLINE SILICON ETCHING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(6), 1998, pp. 3247-3258
Citation: Sc. Mcnevin et M. Cerullo, CONTACT ETCH SCALING WITH CONTACT DIMENSION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1514-1518
Citation: Sc. Mcnevin et M. Cerullo, DIAGNOSING SIO2 CONTACT ETCH SLAP WITH OPTICAL-EMISSION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(3), 1997, pp. 659-663
Citation: A. Peluso et M. Cerullo, MALIGNANT HYPERTHERMIA SUSCEPTIBILITY IN PATIENTS WITH OSTEOGENESIS IMPERFECTA, Paediatric anaesthesia, 5(6), 1995, pp. 398-399
Authors:
JEON DY
CHIN GM
LEE KF
YAN RH
WESTERWICK E
CERULLO M
Citation: Dy. Jeon et al., GATE TECHNOLOGY FOR 0.1-MU-M SI COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR USING G-LINE EXPOSURE AND DEEP-ULTRAVIOLET HARDENING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(4), 1994, pp. 2800-2804
Authors:
LIU TYM
CHIN GM
JEON DY
MORRIS MD
ARCHER VD
JOHNSON RW
TARSIA M
KIM HH
CERULLO M
LEE KF
SUNG JMJ
LAU KS
CHIU TY
VOSHCHENKOV AM
SWARTZ RG
Citation: Tym. Liu et al., AN ULTRA-HIGH-SPEED ECL-BICMOS TECHNOLOGY WITH SILICON FILLET SELF-ALIGNED CONTACTS, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1546-1555