Authors:
CROKE ET
VAJO JJ
HUNTER AT
AHN CC
CHANDRASEKHAR D
LAURSEN T
SMITH DJ
MAYER JW
Citation: Et. Croke et al., STABILIZING THE SURFACE-MORPHOLOGY OF SI1-X-YGEXCY SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY THROUGH THE USE OF A SILICON-CARBIDESOURCE/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1937-1942
Citation: J. Kouvetakis et al., GROWTH AND CHARACTERIZATION OF THIN SI80C20 FILMS BASED UPON SI4C BUILDING-BLOCKS, Applied physics letters, 72(8), 1998, pp. 930-932
Authors:
CHANDRASEKHAR D
MCMURRAN J
SMITH DJ
KOUVETAKIS J
LORENTZEN JD
MENENDEZ J
Citation: D. Chandrasekhar et al., STRATEGIES FOR THE SYNTHESIS OF HIGHLY CONCENTRATED SI1-YCY DIAMOND-STRUCTURED SYSTEMS, Applied physics letters, 72(17), 1998, pp. 2117-2119
Authors:
CROKE ET
HUNTER AT
AHN CC
LAURSEN T
CHANDRASEKHAR D
BAIR AE
SMITH DJ
MAYER JW
Citation: Et. Croke et al., CONTROL OF COMPOSITION AND CRYSTALLINITY IN THE MOLECULAR-BEAM EPITAXY OF STRAIN-COMPENSATED SI1-X-YGEXCY ALLOYS ON SI, Journal of crystal growth, 175, 1997, pp. 486-492
Authors:
LAURSEN T
CHANDRASEKHAR D
SMITH DJ
MAYER JW
HUFFMAN J
WESTHOFF R
ROBINSON M
Citation: T. Laursen et al., CRYSTALLINE-TO-AMORPHOUS TRANSITION IN CHEMICAL-VAPOR-DEPOSITION OF PSEUDOMORPHIC SI1-X-YGEXCY FILMS, Applied physics letters, 71(12), 1997, pp. 1634-1636
Authors:
CHANDRASEKHAR D
SMITH DJ
STRITE S
LIN ME
MORKOC H
Citation: D. Chandrasekhar et al., CHARACTERIZATION OF GROUP-III NITRIDE SEMICONDUCTORS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY, Journal of crystal growth, 152(3), 1995, pp. 135-142
Authors:
TODD M
MATSUNAGA P
KOUVETAKIS J
CHANDRASEKHAR D
SMITH DJ
Citation: M. Todd et al., GROWTH OF HETEROEPITAXIAL SI1-X-YGEXCY ALLOYS ON SILICON USING NOVEL DEPOSITION CHEMISTRY, Applied physics letters, 67(9), 1995, pp. 1247-1249
Authors:
SMITH DJ
CHANDRASEKHAR D
SVERDLOV B
BOTCHKAREV A
SALVADOR A
MORKOC H
Citation: Dj. Smith et al., CHARACTERIZATION OF STRUCTURAL DEFECTS IN WURTZITE GAN GROWN ON 6H SIC USING PLASMA-ENHANCED MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(13), 1995, pp. 1830-1832
Authors:
ATZMON Z
BAIR AE
ALFORD TL
CHANDRASEKHAR D
SMITH DJ
MAYER JW
Citation: Z. Atzmon et al., WET OXIDATION OF AMORPHOUS AND CRYSTALLINE SI1-X-YGEXCY ALLOYS GROWN ON (100)SI SUBSTRATES, Applied physics letters, 66(17), 1995, pp. 2244-2246
Citation: D. Chandrasekhar et B. Vanhouten, HIGH-RESOLUTION MAPPING OF UV-INDUCED PHOTOPRODUCTS IN THE ESCHERICHIA-COLI LACI GENE - INEFFICIENT REPAIR OF THE NONTRANSCRIBED STRAND CORRELATES WITH HIGH MUTATION FREQUENCY, Journal of Molecular Biology, 238(3), 1994, pp. 319-332
Authors:
ATZMON Z
BAIR AE
JAQUEZ EJ
MAYER JW
CHANDRASEKHAR D
SMITH DJ
HERVIG RL
ROBINSON M
Citation: Z. Atzmon et al., CHEMICAL-VAPOR-DEPOSITION OF HETEROEPITAXIAL SI1-X-YGEXCY FILMS ON (100)SI SUBSTRATES, Applied physics letters, 65(20), 1994, pp. 2559-2561
Authors:
STRITE S
CHANDRASEKHAR D
SMITH DJ
SARIEL J
CHEN H
TERAGUCHI N
MORKOC H
Citation: S. Strite et al., STRUCTURAL-PROPERTIES OF INN FILMS GROWN ON GAAS SUBSTRATES - OBSERVATION OF THE ZINCBLENDE POLYTYPE, Journal of crystal growth, 127(1-4), 1993, pp. 204-208