D. Chandrasekhar et al., CHARACTERIZATION OF GROUP-III NITRIDE SEMICONDUCTORS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY, Journal of crystal growth, 152(3), 1995, pp. 135-142
High-resolution electron microscopy has been used to characterize the
microstructure of thin films of GaN, AIN and InN, as grown by plasma-e
nhanced molecular beam epitaxy. Zincblende and wurtzite polytypes were
preferentially nucleated using (001) GaAs and (0001) 6H SiC substrate
s, respectively. Stacking faults and microtwins along {111} planes dom
inated the zincblende films, whereas stacking faults along {0002} plan
es and threading defects originating at the substrate surface were mos
t prevalent in the wurtzite phase. Improved crystal quality was achiev
ed by growing the films on suitable buffer layers.