Authors: CHAVAN ST BHORASKAR VN

Citation: St. Chavan et Vn. Bhoraskar, STUDIES ON DAMAGE-INDUCED BY 45 AND 80 MEV BORON IONS IN CRYSTALLINE SILICON, Radiation physics and chemistry, 51(4-6), 1998, pp. 515-516

Authors: CHAVAN ST DHOLE SD BHORASKAR VN KANJILAL D MEHTA GK

Citation: St. Chavan et al., DEPTH DISTRIBUTION OF SILICON-ION INDUCED DEFECTS IN CRYSTALLINE SILICON, Journal of applied physics, 82(10), 1997, pp. 4805-4809

Authors: BHAVE PS CHAVAN ST BHORASKAR VN

Citation: Ps. Bhave et al., IMPROVEMENT IN SWITCHING CHARACTERISTICS OF SILICON DIODES THROUGH A SELECTIVE ZONE OF DEFECTS PRODUCED BY 6 MEV ELECTRONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(3), 1995, pp. 334-338

Authors: CHAVAN ST BHAVE PS BHORASKAR VN KANJILAL D

Citation: St. Chavan et al., DAMAGE-INDUCED BY 90 MEV SILICON IONS IN CRYSTALLINE SILICON, Journal of applied physics, 78(4), 1995, pp. 2328-2332