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Results: 1-10 |
Results: 10
EXTINCTION RATIO OF CROSS-GAIN MODULATED MULTISTAGE WAVELENGTH CONVERTERS - MODEL AND EXPERIMENTS
Authors: CHELLES S DEVAUX F MEICHENIN D SIGOGNE D CARENCO A
Citation: S. Chelles et al., EXTINCTION RATIO OF CROSS-GAIN MODULATED MULTISTAGE WAVELENGTH CONVERTERS - MODEL AND EXPERIMENTS, IEEE photonics technology letters, 9(6), 1997, pp. 758-760
GAIN MODELING OF STRAINED INGAASP BASED MQW OPTICAL AMPLIFIERS
Authors: DEBAISIEUX G GUEMMOURI M CHELLES S OUGAZZADEN A HERVEGRUYER G FILOCHE M MARZIN JY
Citation: G. Debaisieux et al., GAIN MODELING OF STRAINED INGAASP BASED MQW OPTICAL AMPLIFIERS, IEEE photonics technology letters, 9(11), 1997, pp. 1475-1477
ELECTROABSORPTION MODULATORS FOR HIGH-BIT-RATE OPTICAL COMMUNICATIONS- COMPARISON OF STRAINED INGAAS INALAS AND INGAASP/INGAASP/
Authors: DEVAUX F CHELLES S OUGAZZADEN A MIRCEA A HARMAND JC
Citation: F. Devaux et al., ELECTROABSORPTION MODULATORS FOR HIGH-BIT-RATE OPTICAL COMMUNICATIONS- COMPARISON OF STRAINED INGAAS INALAS AND INGAASP/INGAASP/, Semiconductor science and technology, 10(7), 1995, pp. 887-901
ON THE DESIGN OF POLARIZATION-INSENSITIVE OPTOELECTRONIC DEVICES
Authors: CHELLES S FERREIRA R VOISIN P
Citation: S. Chelles et al., ON THE DESIGN OF POLARIZATION-INSENSITIVE OPTOELECTRONIC DEVICES, Semiconductor science and technology, 10(1), 1995, pp. 105-109
HIGH-PERFORMANCE POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATORBASED ON STRAINED GAINAS-ALINAS MULTIPLE-QUANTUM WELLS
Authors: CHELLES S FERREIRA R VOISIN P HARMAND JC
Citation: S. Chelles et al., HIGH-PERFORMANCE POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATORBASED ON STRAINED GAINAS-ALINAS MULTIPLE-QUANTUM WELLS, Applied physics letters, 67(2), 1995, pp. 247-249
FULL POLARIZATION INSENSITIVITY OF A 20 GB S STRAINED-MQW ELECTROABSORPTION MODULATOR/
Authors: DEVAUX F CHELLES S OUGAZZADEN A MIRCEA A CARRE M HUET F CARENCO A SOREL Y KERDILES JF HENRY M
Citation: F. Devaux et al., FULL POLARIZATION INSENSITIVITY OF A 20 GB S STRAINED-MQW ELECTROABSORPTION MODULATOR/, IEEE photonics technology letters, 6(10), 1994, pp. 1203-1206
FULL POLARIZATION INSENSITIVITY OF A 20 GB S STRAINED-MQW ELECTROABSORPTION MODULATOR/
Authors: DEVAUX F CHELLES S OUGAZZADEN A MIRCEA A CARRE M HUET F CARENCO A SOREL Y KERDILES JF HENRY M
Citation: F. Devaux et al., FULL POLARIZATION INSENSITIVITY OF A 20 GB S STRAINED-MQW ELECTROABSORPTION MODULATOR/, IEEE photonics technology letters, 6(10), 1994, pp. 1203-1206
INTERACTION BETWEEN WANNIER-STARK STATES IN SEMICONDUCTOR SUPERLATTICES
Authors: BASTARD G FERREIRA R CHELLES S VOISIN P
Citation: G. Bastard et al., INTERACTION BETWEEN WANNIER-STARK STATES IN SEMICONDUCTOR SUPERLATTICES, Physical review. B, Condensed matter, 50(7), 1994, pp. 4445-4449
EFFICIENT POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATOR USING STRAINED INGAASP-BASED QUANTUM-WELLS
Authors: CHELLES S FERREIRA R VOISIN P OUGAZZADEN A ALLOVON M CARENCO A
Citation: S. Chelles et al., EFFICIENT POLARIZATION-INSENSITIVE ELECTROABSORPTION MODULATOR USING STRAINED INGAASP-BASED QUANTUM-WELLS, Applied physics letters, 64(26), 1994, pp. 3530-3532
10 GBIT S OPERATION OF POLARIZATION-INSENSITIVE, STRAINED INGAASP INGAASP MQW ELECTROABSORPTION MODULATOR/
Authors: DEVAUX F CHELLES S OUGAZZADEN A MIRCEA A HUET F CARRE M
Citation: F. Devaux et al., 10 GBIT S OPERATION OF POLARIZATION-INSENSITIVE, STRAINED INGAASP INGAASP MQW ELECTROABSORPTION MODULATOR/, Electronics Letters, 29(13), 1993, pp. 1201-1203
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