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Results: 1-8 |
Results: 8
LOCALIZATION OF EXCITONS BY POTENTIAL FLUCTUATIONS AND ITS EFFECT ON THE STOKES SHIFT IN INGAP INP QUANTUM-CONFINED HETEROSTRUCTURES/
Authors: AITOUALI A CHENNOUF A YIP RYF BREBNER JL LEONELLI R MASUT RA
Citation: A. Aitouali et al., LOCALIZATION OF EXCITONS BY POTENTIAL FLUCTUATIONS AND ITS EFFECT ON THE STOKES SHIFT IN INGAP INP QUANTUM-CONFINED HETEROSTRUCTURES/, Journal of applied physics, 84(10), 1998, pp. 5639-5642
OPTICAL-ABSORPTION AND DETERMINATION OF BAND-OFFSET IN STRAIN-BALANCED GAINP INASP MULTIPLE-QUANTUM WELLS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY/
Authors: ABABOU Y DESJARDINS P CHENNOUF A MASUT RA YELON A BEAUDOIN M BENSAADA A LEONELLI R LESPERANCE G
Citation: Y. Ababou et al., OPTICAL-ABSORPTION AND DETERMINATION OF BAND-OFFSET IN STRAIN-BALANCED GAINP INASP MULTIPLE-QUANTUM WELLS GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY/, Semiconductor science and technology, 12(5), 1997, pp. 550-554
SELF-CONSISTENT DETERMINATION OF THE BAND OFFSETS IN INASXP1-X INP STRAINED-LAYER QUANTUM-WELLS AND THE BOWING PARAMETER OF BULK INASXP1-X/
Authors: BEAUDOIN M BENSAADA A LEONELLI R DESJARDINS P MASUT RA ISNARD L CHENNOUF A LESPERANCE G
Citation: M. Beaudoin et al., SELF-CONSISTENT DETERMINATION OF THE BAND OFFSETS IN INASXP1-X INP STRAINED-LAYER QUANTUM-WELLS AND THE BOWING PARAMETER OF BULK INASXP1-X/, Physical review. B, Condensed matter, 53(4), 1996, pp. 1990-1996
EFFECT OF RAPID THERMAL ANNEALING ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF HIGHLY STRAINED INAS INP QUANTUM-WELL STRUCTURES/
Authors: XING QJ BREBNER JL LUO XM BEAUDOIN M CHENNOUF A AHMAD G CHEN CW
Citation: Qj. Xing et al., EFFECT OF RAPID THERMAL ANNEALING ON THE OPTICAL AND STRUCTURAL-PROPERTIES OF HIGHLY STRAINED INAS INP QUANTUM-WELL STRUCTURES/, Solid state communications, 98(11), 1996, pp. 1009-1013
STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GROWN ON SI(111) BY METALORGANIC VAPOR-PHASE EPITAXY USING THERMAL CYCLE GROWTH
Authors: ABABOU Y DESJARDINS P CHENNOUF A LEONELLI R HETHERINGTON D YELON A LESPERANCE G MASUT RA
Citation: Y. Ababou et al., STRUCTURAL AND OPTICAL CHARACTERIZATION OF INP GROWN ON SI(111) BY METALORGANIC VAPOR-PHASE EPITAXY USING THERMAL CYCLE GROWTH, Journal of applied physics, 80(9), 1996, pp. 4997-5005
LABORATORY EVALUATION OF CEMENT-BASED GROUTS AND GROUTED ROCK ANCHORS
Authors: BENMOKRANE B CHENNOUF A MITRI HS
Citation: B. Benmokrane et al., LABORATORY EVALUATION OF CEMENT-BASED GROUTS AND GROUTED ROCK ANCHORS, International journal of rock mechanics and mining sciences & geomechanics abstracts, 32(7), 1995, pp. 633-642
MISFIT STRAIN, RELAXATION, AND BAND-GAP SHIFT IN GAXIN1-XP INP EPITAXIAL LAYERS/
Authors: BENSAADA A CHENNOUF A COCHRANE RW GRAHAM JT LEONELLI R MASUT RA
Citation: A. Bensaada et al., MISFIT STRAIN, RELAXATION, AND BAND-GAP SHIFT IN GAXIN1-XP INP EPITAXIAL LAYERS/, Journal of applied physics, 75(6), 1994, pp. 3024-3029
BAND ALIGNMENT IN GAXIN1-XP INP HETEROSTRUCTURES
Authors: BENSAADA A GRAHAM JT BREBNER JL CHENNOUF A COCHRANE RW LEONELLI R MASUT RA
Citation: A. Bensaada et al., BAND ALIGNMENT IN GAXIN1-XP INP HETEROSTRUCTURES, Applied physics letters, 64(3), 1994, pp. 273-275
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