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Results: 2
INFLUENCE OF NEAR-SURFACE DEFECTS IN SI INDUCED BY REACTIVE ION ETCHING ON THE ELECTRICAL-PROPERTIES OF THE PT N-SI INTERFACE/
Authors: KOYAMA M CHEONG CW YOKOYAMA K OHDOMARI I
Citation: M. Koyama et al., INFLUENCE OF NEAR-SURFACE DEFECTS IN SI INDUCED BY REACTIVE ION ETCHING ON THE ELECTRICAL-PROPERTIES OF THE PT N-SI INTERFACE/, JPN J A P 1, 36(11), 1997, pp. 6682-6686
ESTIMATION OF SPATIAL EXTENT OF A DEFEAT CLUSTER IN SI INDUCED BY SINGLE-ION IRRADIATION
Authors: KOYAMA M CHEONG CW YOKOYAMA K OHDOMARI I
Citation: M. Koyama et al., ESTIMATION OF SPATIAL EXTENT OF A DEFEAT CLUSTER IN SI INDUCED BY SINGLE-ION IRRADIATION, JPN J A P 2, 36(6A), 1997, pp. 708-710
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