Authors: WANG TH CHIANG LP ZOUS NK CHANG TE HUANG C

Citation: Th. Wang et al., CHARACTERIZATION OF VARIOUS STRESS-INDUCED OXIDE TRAPS IN MOSFETS BY USING A SUBTHRESHOLD TRANSIENT CURRENT TECHNIQUE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1791-1796

Authors: WANG TH CHANG TE CHIANG LP WANG CH ZOUS NK HUANG CM

Citation: Th. Wang et al., INVESTIGATION OF OXIDE CHARGE TRAPPING AND DETRAPPING IN A MOSFET BY USING A GIDL CURRENT TECHNIQUE, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1511-1517

Authors: CHIANG LP ZOUS NK WANG TH CHANG TE SHEN KY HUANG C

Citation: Lp. Chiang et al., FIELD AND TEMPERATURE EFFECTS ON OXIDE CHARGE DETRAPPING IN A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MEASURING A SUBTHRESHOLDCURRENT TRANSIENT, Applied physics letters, 71(8), 1997, pp. 1068-1070

Authors: WANG TH CHANG TE CHIANG LP HUANG C

Citation: Th. Wang et al., A NEW TECHNIQUE TO EXTRACT OXIDE TRAP TIME CONSTANTS IN MOSFETS, IEEE electron device letters, 17(8), 1996, pp. 398-400

Authors: WANG TH CHANG TE HUANG CM YANG JY CHANG KM CHIANG LP

Citation: Th. Wang et al., STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS, IEEE electron device letters, 16(12), 1995, pp. 566-568