Authors:
WANG TH
CHIANG LP
ZOUS NK
CHANG TE
HUANG C
Citation: Th. Wang et al., CHARACTERIZATION OF VARIOUS STRESS-INDUCED OXIDE TRAPS IN MOSFETS BY USING A SUBTHRESHOLD TRANSIENT CURRENT TECHNIQUE, I.E.E.E. transactions on electron devices, 45(8), 1998, pp. 1791-1796
Authors:
WANG TH
CHANG TE
CHIANG LP
WANG CH
ZOUS NK
HUANG CM
Citation: Th. Wang et al., INVESTIGATION OF OXIDE CHARGE TRAPPING AND DETRAPPING IN A MOSFET BY USING A GIDL CURRENT TECHNIQUE, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1511-1517
Authors:
CHIANG LP
ZOUS NK
WANG TH
CHANG TE
SHEN KY
HUANG C
Citation: Lp. Chiang et al., FIELD AND TEMPERATURE EFFECTS ON OXIDE CHARGE DETRAPPING IN A METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR BY MEASURING A SUBTHRESHOLDCURRENT TRANSIENT, Applied physics letters, 71(8), 1997, pp. 1068-1070
Authors:
WANG TH
CHANG TE
HUANG CM
YANG JY
CHANG KM
CHIANG LP
Citation: Th. Wang et al., STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS, IEEE electron device letters, 16(12), 1995, pp. 566-568