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Citation: Jb. Mckeon et al., EXPERIMENTAL-DETERMINATION OF ELECTRON AND HOLE MOBILITIES IN MOS ACCUMULATION LAYERS, IEEE electron device letters, 18(5), 1997, pp. 200-202

Authors: CHINDALORE G HARELAND SA JALLEPALLI S TASCH AF MAZIAR CM CHIA VKF SMITH S

Citation: G. Chindalore et al., EXPERIMENTAL-DETERMINATION OF THRESHOLD VOLTAGE SHIFTS DUE TO QUANTUM-MECHANICAL EFFECTS IN MOS ELECTRON AND HOLE INVERSION-LAYERS, IEEE electron device letters, 18(5), 1997, pp. 206-208

Authors: HARELAND SA JALLEPALLI S CHINDALORE G SHIH WK TASCH AF MAZIAR CM

Citation: Sa. Hareland et al., A SIMPLE-MODEL FOR QUANTUM-MECHANICAL EFFECTS IN HOLE INVERSION-LAYERS IN SILICON PMOS DEVICES, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1172-1173