A SIMPLE-MODEL FOR QUANTUM-MECHANICAL EFFECTS IN HOLE INVERSION-LAYERS IN SILICON PMOS DEVICES

The effects of quantization of the inversion layer of MOSFET devices i s an area of increasing importance as technology is aggressively scale d below 0.25 mu m. Although electron inversion layers have attracted c onsiderable interest, very little work has been reported for holes, Th is paper describes the implementation and results of a simple, computa tionally efficient model, appropriate for device simulators, for predi cting the effects of hole inversion layer quantization, This model com pares very favorably with experimental results and the predictions of a full-band, self-consistent Schrodinger-Poisson solver.