Authors:
MCKEON JB
CHINDALORE G
HARELAND SA
SHIH WK
WANG C
TASCH AF
MAZIAR CM
Citation: Jb. Mckeon et al., EXPERIMENTAL-DETERMINATION OF ELECTRON AND HOLE MOBILITIES IN MOS ACCUMULATION LAYERS, IEEE electron device letters, 18(5), 1997, pp. 200-202
Authors:
CHINDALORE G
HARELAND SA
JALLEPALLI S
TASCH AF
MAZIAR CM
CHIA VKF
SMITH S
Citation: G. Chindalore et al., EXPERIMENTAL-DETERMINATION OF THRESHOLD VOLTAGE SHIFTS DUE TO QUANTUM-MECHANICAL EFFECTS IN MOS ELECTRON AND HOLE INVERSION-LAYERS, IEEE electron device letters, 18(5), 1997, pp. 206-208
Authors:
HARELAND SA
JALLEPALLI S
CHINDALORE G
SHIH WK
TASCH AF
MAZIAR CM
Citation: Sa. Hareland et al., A SIMPLE-MODEL FOR QUANTUM-MECHANICAL EFFECTS IN HOLE INVERSION-LAYERS IN SILICON PMOS DEVICES, I.E.E.E. transactions on electron devices, 44(7), 1997, pp. 1172-1173