Citation: Hd. Chiou et al., THE STRESS AND STRENGTH AT THE NECK OF A LARGE-DIAMETER SILICON CRYSTAL DURING GROWTH, Journal of the Electrochemical Society, 144(8), 1997, pp. 2881-2886
Citation: Hd. Chiou et al., WARPAGE AND OXIDE PRECIPITATE DISTRIBUTIONS IN CZ SILICON-WAFERS, Journal of the Electrochemical Society, 141(7), 1994, pp. 1856-1862
Citation: Hd. Chiou, IMPROVING AXIAL OXYGEN PRECIPITATION UNIFORMITY IN CZ SILICON-CRYSTALS USING THE S-CURVE CONCEPT, Journal of the Electrochemical Society, 141(1), 1994, pp. 173-178
Citation: W. Wijaranakula et Hd. Chiou, EFFECT OF HIGH-TEMPERATURE ANNEALING ON THE DISSOLUTION OF THE D-DEFECTS IN N-TYPE CZOCHRALSKI SILICON, Applied physics letters, 64(8), 1994, pp. 1030-1032