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Results:
1-9
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Results: 9
Authors:
KIM JS
PAIK CH
CHO WI
CHO BW
YUN KS
KIM SJ
Citation: Js. Kim et al., CORROSION BEHAVIOR OF ZR1-XTIXV0.6NI1.2M0.2 (M=NI, CR, MN) AB(2)-TYPEMETAL HYDRIDE ALLOYS IN ALKALINE-SOLUTION, Journal of power sources, 75(1), 1998, pp. 1-8
Authors:
SOHN BK
CHO BW
KIM CS
KWON DH
Citation: Bk. Sohn et al., ISFET GLUCOSE AND SUCROSE SENSORS BY USING PLATINUM-ELECTRODE AND PHOTO-CROSS-LINKABLE POLYMERS, Sensors and actuators. B, Chemical, 41(1-3), 1997, pp. 7-11
Authors:
KIM HS
PAIK CH
CHO BW
KIM JT
YUN KS
CHUN HS
Citation: Hs. Kim et al., DISCHARGE CHARACTERISTICS OF AN LI LICOO2 CELL WITH POLY(ACRYLONITIRILE)-BASED POLYMER ELECTROLYTE/, Journal of power sources, 68(2), 1997, pp. 361-363
Authors:
KWON DH
CHO BW
KIM CS
SOHN BK
Citation: Dh. Kwon et al., EFFECTS OF HEAT-TREATMENT ON TA2O5 SENSING MEMBRANE FOR LOW DRIFT ANDHIGH-SENSITIVITY PH-ISFET, Sensors and actuators. B, Chemical, 34(1-3), 1996, pp. 441-445
Authors:
KIM HS
CHO BW
KIM JT
YUN KS
CHUN HS
Citation: Hs. Kim et al., ELECTROCHEMICAL PROPERTIES AND PERFORMANCE OF POLY(ACRYLONITRILE)-BASED POLYMER ELECTROLYTE FOR LI LICOO2 CELLS/, Journal of power sources, 62(1), 1996, pp. 21-26
Authors:
KIM I
KIM JS
CHO BW
AHN SD
CHUN JS
LEE WJ
Citation: I. Kim et al., EFFECTS OF DEPOSITION TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION TA2O5 FILM AND THE FORMATION OF INTERFACIAL SIO2, Journal of materials research, 10(11), 1995, pp. 2864-2869
Authors:
KIM I
AHN SD
CHO BW
AHN ST
LEE JY
CHUN JS
LEE WJ
Citation: I. Kim et al., MICROSTRUCTURE AND ELECTRICAL-PROPERTIES OF TANTALUM OXIDE THIN-FILM PREPARED BY ELECTRON-CYCLOTRON-RESONANCE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(12A), 1994, pp. 6691-6698
Authors:
PARK SY
CHO BW
YUN KS
LEE EC
Citation: Sy. Park et al., PHOTOELECTROCHEMICAL PROPERTIES OF BISMUTH-DOPED TITANIUM-OXIDE ELECTRODES, Journal of Applied Electrochemistry, 24(11), 1994, pp. 1133-1138
Authors:
CHOI SK
YI CW
CHO WI
CHO BW
JU JB
YUN KS
YAMAZOE N
Citation: Sk. Choi et al., A MOSFET TYPE SENSOR FOR OXYGEN SENSING USING LAF3 AS A GATE MATERIAL, Sensors and actuators. B, Chemical, 13(1-3), 1993, pp. 45-48
Risultati:
1-9
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