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Results: 1-13 |
Results: 13
AUGER INVESTIGATIONS OF THIN SIC FILMS
Authors: ECKE G ROSSLER H CIMALLA V PEZOLDT J STAUDEN T
Citation: G. Ecke et al., AUGER INVESTIGATIONS OF THIN SIC FILMS, Fresenius' journal of analytical chemistry, 361(6-7), 1998, pp. 564-568
OPTICAL CHARACTERIZATION OF MBE GROWN CUBIC AND HEXAGONAL SIC FILMS ON SI(111)
Authors: WERNINGHAUS T FRIEDRICH M CIMALLA V SCHEINER J GOLDHAHN R ZAHN DRT PEZOLDT J
Citation: T. Werninghaus et al., OPTICAL CHARACTERIZATION OF MBE GROWN CUBIC AND HEXAGONAL SIC FILMS ON SI(111), DIAMOND AND RELATED MATERIALS, 7(9), 1998, pp. 1385-1389
REFLECTIVITY STUDY OF HEXAGONAL GAN FILMS GROWN ON GAAS - SURFACE-ROUGHNESS, INTERFACE LAYER, AND REFRACTIVE-INDEX
Authors: SHOKHOVETS S GOLDHAHN R CIMALLA V CHENG TS FOXON CT
Citation: S. Shokhovets et al., REFLECTIVITY STUDY OF HEXAGONAL GAN FILMS GROWN ON GAAS - SURFACE-ROUGHNESS, INTERFACE LAYER, AND REFRACTIVE-INDEX, Journal of applied physics, 84(3), 1998, pp. 1561-1566
AES DEPTH PROFILES OF THIN SIC-LAYERS - SIMULATION OF ION-BEAM-INDUCED MIXING
Authors: ECKE G ROSSLER H CIMALLA V LIDAY J
Citation: G. Ecke et al., AES DEPTH PROFILES OF THIN SIC-LAYERS - SIMULATION OF ION-BEAM-INDUCED MIXING, Fresenius' journal of analytical chemistry, 358(1-2), 1997, pp. 355-357
CHEMICAL CONVERSION OF SI TO SIC BY SOLID SOURCE MBE AND RTCVD
Authors: PEZOLDT J CIMALLA V STAUDEN T ECKE G EICHHORN G SCHARMANN F SCHIPANSKI D
Citation: J. Pezoldt et al., CHEMICAL CONVERSION OF SI TO SIC BY SOLID SOURCE MBE AND RTCVD, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1311-1315
ATOMIC-FORCE MICROSCOPY INVESTIGATIONS OF RAPID THERMAL CARBONIZED SILICON
Authors: ROMANUS H CIMALLA V KROMKA A SCHEINER J SPIEB L PEZOLDT J
Citation: H. Romanus et al., ATOMIC-FORCE MICROSCOPY INVESTIGATIONS OF RAPID THERMAL CARBONIZED SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 47(3), 1997, pp. 274-278
A GROWTH-MODEL FOR THE CARBONIZATION OF SILICON SURFACES
Authors: CIMALLA V PEZOLDT J EICHHORN G
Citation: V. Cimalla et al., A GROWTH-MODEL FOR THE CARBONIZATION OF SILICON SURFACES, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 199-202
INTERPRETATION OF AUGER DEPTH PROFILES OF THIN SIC LAYERS ON SI
Authors: ECKE G ROSSLER H CIMALLA V PEZOLDT J
Citation: G. Ecke et al., INTERPRETATION OF AUGER DEPTH PROFILES OF THIN SIC LAYERS ON SI, Mikrochimica acta, 125(1-4), 1997, pp. 219-222
THE DEPOSITION OF ALUMINUM NITRIDE ON SILICON BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: STAUDEN T EICHHORN G CIMALLA V PEZOLDT J ECKE G
Citation: T. Stauden et al., THE DEPOSITION OF ALUMINUM NITRIDE ON SILICON BY PLASMA-ENHANCED METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 5(10), 1996, pp. 1210-1213
SLIP GENERATION DURING RAPID THERMAL-PROCESSING
Authors: ZOLLNER JP EICHHORN G CIMALLA V BOZMAROV J ZAUMSEIL P KURSCHNER H
Citation: Jp. Zollner et al., SLIP GENERATION DURING RAPID THERMAL-PROCESSING, Physica status solidi. a, Applied research, 156(1), 1996, pp. 63-70
CHARACTERIZATION OF BUFFER LAYERS FOR SIC CVD
Authors: CIMALLA V PEZOLDT J ECKE G ROSSLER H EICHHORN G
Citation: V. Cimalla et al., CHARACTERIZATION OF BUFFER LAYERS FOR SIC CVD, Journal de physique. IV, 5(C5), 1995, pp. 863-870
GROWTH OF THIN BETA-SIC LAYERS BY CARBONIZATION OF SI SURFACES BY RAPID THERMAL-PROCESSING
Authors: CIMALLA V KARAGODINA KV PEZOLDT J EICHHORN G
Citation: V. Cimalla et al., GROWTH OF THIN BETA-SIC LAYERS BY CARBONIZATION OF SI SURFACES BY RAPID THERMAL-PROCESSING, Materials science & engineering. B, Solid-state materials for advanced technology, 29(1-3), 1995, pp. 170-175
RTP - TEMPERATURE MONITORING BY MEANS OF OXIDATION
Authors: ZOLLNER JP CIMALLA V PEZOLDT J
Citation: Jp. Zollner et al., RTP - TEMPERATURE MONITORING BY MEANS OF OXIDATION, Journal of non-crystalline solids, 187, 1995, pp. 23-28
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