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Results: 1-8 |
Results: 8
INTERFACE FORMATION AND THERMAL-STABILITY OF ADVANCED METAL GATE AND ULTRATHIN GATE DIELECTRIC LAYERS
Authors: CLAFLIN B LUCOVSKY G
Citation: B. Claflin et G. Lucovsky, INTERFACE FORMATION AND THERMAL-STABILITY OF ADVANCED METAL GATE AND ULTRATHIN GATE DIELECTRIC LAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2154-2158
INTERFACE STUDIES OF TUNGSTEN NITRIDE AND TITANIUM NITRIDE COMPOSITE METAL GATE ELECTRODES WITH THIN DIELECTRIC LAYERS
Authors: CLAFLIN B BINGER M LUCOVSKY G
Citation: B. Claflin et al., INTERFACE STUDIES OF TUNGSTEN NITRIDE AND TITANIUM NITRIDE COMPOSITE METAL GATE ELECTRODES WITH THIN DIELECTRIC LAYERS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(3), 1998, pp. 1757-1761
MINIMIZATION OF SUBOXIDE TRANSITION REGIONS AT SI-SIO2 INTERFACES BY 900 DEGREES-C RAPID THERMAL ANNEALING
Authors: LUCOVSKY G BANERJEE A HINDS B CLAFLIN B KOH K YANG H
Citation: G. Lucovsky et al., MINIMIZATION OF SUBOXIDE TRANSITION REGIONS AT SI-SIO2 INTERFACES BY 900 DEGREES-C RAPID THERMAL ANNEALING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(4), 1997, pp. 1074-1079
MINIMIZATION OF SUBOXIDE TRANSITION REGIONS AT SI-SIO2 INTERFACES BY 900-DEGREES-C RAPID THERMAL ANNEALING
Authors: LUCOVSKY G BANERJEE A HINDS B CLAFLIN B KOH K YANG H
Citation: G. Lucovsky et al., MINIMIZATION OF SUBOXIDE TRANSITION REGIONS AT SI-SIO2 INTERFACES BY 900-DEGREES-C RAPID THERMAL ANNEALING, Microelectronic engineering, 36(1-4), 1997, pp. 207-210
THE ROLE OF OXYGEN DIFFUSION IN PHOTOINDUCED CHANGES OF THE ELECTRONIC AND OPTICAL-PROPERTIES IN AMORPHOUS INDIUM OXIDE
Authors: CLAFLIN B FRITZSCHE H
Citation: B. Claflin et H. Fritzsche, THE ROLE OF OXYGEN DIFFUSION IN PHOTOINDUCED CHANGES OF THE ELECTRONIC AND OPTICAL-PROPERTIES IN AMORPHOUS INDIUM OXIDE, Journal of electronic materials, 25(11), 1996, pp. 1772-1777
REVERSIBLE CHANGES OF THE OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS INOX BY PHOTOREDUCTION AND OXIDATION
Authors: FRITZSCHE H PASHMAKOV B CLAFLIN B
Citation: H. Fritzsche et al., REVERSIBLE CHANGES OF THE OPTICAL AND ELECTRICAL-PROPERTIES OF AMORPHOUS INOX BY PHOTOREDUCTION AND OXIDATION, Solar energy materials and solar cells, 32(4), 1994, pp. 383-393
PHOTOREDUCTION AND OXIDATION OF AMORPHOUS INDIUM OXIDE
Authors: PASHMAKOV B CLAFLIN B FRITZSCHE H
Citation: B. Pashmakov et al., PHOTOREDUCTION AND OXIDATION OF AMORPHOUS INDIUM OXIDE, Solid state communications, 86(10), 1993, pp. 619-622
TRANSPORT NEAR THE MOBILITY EDGE, THE SIGN OF THE HALL-EFFECT, PHOTOREDUCTION AND OXIDATION OF AMORPHOUS INO-CHI
Authors: PASHMAKOV B CLAFLIN B FRITZSCHE H
Citation: B. Pashmakov et al., TRANSPORT NEAR THE MOBILITY EDGE, THE SIGN OF THE HALL-EFFECT, PHOTOREDUCTION AND OXIDATION OF AMORPHOUS INO-CHI, Journal of non-crystalline solids, 166, 1993, pp. 441-444
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