Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T

Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 455-468

Authors: HARAME DL COMFORT JH CRESSLER JD CRABBE EF SUN JYC MEYERSON BS TICE T

Citation: Dl. Harame et al., SI SIGE EPITAXIAL-BASE TRANSISTORS .2. PROCESS INTEGRATION AND ANALOGAPPLICATIONS/, I.E.E.E. transactions on electron devices, 42(3), 1995, pp. 469-482

Authors: CRESSLER JD RICHEY DM JAEGER RC CRABBE EF COMFORT JH STORK JMC

Citation: Jd. Cressler et al., HIGH-INJECTION BARRIER EFFECTS IN SIGE HBTS OPERATING AT CRYOGENIC TEMPERATURES, Journal de physique. IV, 4(C6), 1994, pp. 117-122

Authors: CRESSLER JD CRABBE EF COMFORT JH SUN JYC STORK JMC

Citation: Jd. Cressler et al., AN EPITAXIAL EMITTER-CAP SIGE-BASE BIPOLAR TECHNOLOGY OPTIMIZED FOR LIQUID-NITROGEN TEMPERATURE OPERATION, IEEE electron device letters, 15(11), 1994, pp. 472-474

Authors: SHAHIDI GG ANDERSON CA CHAPPELL BA CHAPPELL TI COMFORT JH DAVARI B DENNARD RH FRANCH RL MCFARLAND PA NEELY JS NING TH POLCARI MR WARNOCK JD

Citation: Gg. Shahidi et al., A ROOM-TEMPERATURE 0.1 MU-M CMOS ON SOI, I.E.E.E. transactions on electron devices, 41(12), 1994, pp. 2405-2412

Authors: CRABBE EF COMFORT JH CRESSLER JD SUN JYC STORK JMC

Citation: Ef. Crabbe et al., HIGH-LOW POLYSILICON-EMITTER SIGE-BASE BIPOLAR-TRANSISTORS, IEEE electron device letters, 14(10), 1993, pp. 478-480