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Results:
1-7
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Results: 7
Authors:
WANG YZ
AWADELKARIM OO
COUILLARD JG
AST DG
Citation: Yz. Wang et al., THE EFFECT OF SUBSTRATES ON THE PERFORMANCE AND HOT-CARRIER RELIABILITY OF N-CHANNEL THIN-FILM TRANSISTORS, Semiconductor science and technology, 13(5), 1998, pp. 532-535
Authors:
ONYIRIUKA EC
MOORE CB
FEHLNER FP
BINKOWSKI NJ
SALAMIDA D
KING TJ
COUILLARD JG
Citation: Ec. Onyiriuka et al., EFFECT OF RCA CLEANING ON THE SURFACE-CHEMISTRY OF GLASS AND POLYSILICON FILMS AS STUDIED BY TOF-SIMS AND XPS, Surface and interface analysis, 26(4), 1998, pp. 270-277
Authors:
WANG YZ
AWADELKARIM OO
COUILLARD JG
AST DG
Citation: Yz. Wang et al., THE EFFECTS OF SUBSTRATES ON THE CHARACTERISTICS OF POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS, Solid-state electronics, 42(9), 1998, pp. 1689-1696
Authors:
KIM HS
COUILLARD JG
AST DG
Citation: Hs. Kim et al., KINETICS OF SILICIDE-INDUCED CRYSTALLIZATION OF POLYCRYSTALLINE THIN-FILM TRANSISTORS FABRICATED FROM AMORPHOUS CHEMICAL-VAPOR-DEPOSITION SILICON, Applied physics letters, 72(7), 1998, pp. 803-805
Authors:
COUILLARD JG
AST DG
UMBACH C
BLAKELY JM
MOORE CB
FEHLNER FP
Citation: Jg. Couillard et al., CHEMICAL TREATMENT OF GLASS SUBSTRATES, Journal of non-crystalline solids, 222, 1997, pp. 429-434
Authors:
XIANG Q
LI SZ
WANG DW
WANG KL
COUILLARD JG
CRAIGHEAD HG
Citation: Q. Xiang et al., INTERFACET MASS-TRANSPORT AND FACET EVOLUTION IN SELECTIVE EPITAXIAL-GROWTH OF SI BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2381-2386
Authors:
COUILLARD JG
CRAIGHEAD HG
Citation: Jg. Couillard et Hg. Craighead, PHOTOLITHOGRAPHIC PATTERNING OF POROUS SILICON, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 161-162
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1-7
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