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Results: 2
HIGH-RESOLUTION DIFFRACTION AND DLTS INVESTIGATION RESULTS OF THE EPITAXIAL GA(1-X)AL(X)S GAAS LAYERS PRODUCED WITH THE MOCVD METHOD/
Authors: CZEKALAMUKALLED Z KUZMINSKI S PLACZEKPOPKO E SZATKOWSKI J KOZLOWSKI J JEDRAL L
Citation: Z. Czekalamukalled et al., HIGH-RESOLUTION DIFFRACTION AND DLTS INVESTIGATION RESULTS OF THE EPITAXIAL GA(1-X)AL(X)S GAAS LAYERS PRODUCED WITH THE MOCVD METHOD/, Vacuum, 48(3-4), 1997, pp. 269-271
PHOTOELECTRONIC PROPERTIES OF THE GAAS, SI EPITAXIAL LAYERS ON THE GAAS SUBSTRATE
Authors: CZEKALAMUKALLED Z KUZMINSKI S TLACZALA M
Citation: Z. Czekalamukalled et al., PHOTOELECTRONIC PROPERTIES OF THE GAAS, SI EPITAXIAL LAYERS ON THE GAAS SUBSTRATE, Vacuum, 46(5-6), 1995, pp. 489-491
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