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Results: 1-10 |
Results: 10
Luminescence of silicon thin film and SiGe multiple quantum wells realizedon SOI
Authors: Calvo, V Sotta, D Ulmer, H Hadji, E Magnea, N Dumont, F Moriceau, H Hernandez, C Campidelli, Y
Citation: V. Calvo et al., Luminescence of silicon thin film and SiGe multiple quantum wells realizedon SOI, OPT MATER, 17(1-2), 2001, pp. 107-110
Optical recombination from excited states in Ge/Si self-assembled quantum dots - art. no. 155310
Authors: Boucaud, P Sauvage, S Elkurdi, M Mercier, E Brunhes, T Le Thanh, V Bouchier, D Kermarrec, O Campidelli, Y Bensahel, D
Citation: P. Boucaud et al., Optical recombination from excited states in Ge/Si self-assembled quantum dots - art. no. 155310, PHYS REV B, 6415(15), 2001, pp. 5310
Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers
Authors: Yousif, MYA Nur, O Willander, M Patel, CJ Hernandez, C Campidelli, Y Bensahel, D Kyutt, RN
Citation: Mya. Yousif et al., Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers, SOL ST ELEC, 45(11), 2001, pp. 1869-1874
Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping
Authors: Nur, O Karlsteen, M Sodervall, U Willander, M Patel, CJ Hernandez, C Campidelli, Y Bensahel, D Kyutt, RN
Citation: O. Nur et al., Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping, SEMIC SCI T, 15(7), 2000, pp. L25-L30
Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition
Authors: Patriarche, G Sagnes, I Boucaud, P Le Thanh, V Bouchier, D Hernandez, C Campidelli, Y Bensahel, D
Citation: G. Patriarche et al., Strain and composition of capped Ge/Si self-assembled quantum dots grown by chemical vapor deposition, APPL PHYS L, 77(3), 2000, pp. 370-372
Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition
Authors: Brunhes, T Boucaud, P Sauvage, S Aniel, F Lourtioz, JM Hernandez, C Campidelli, Y Kermarrec, O Bensahel, D Faini, G Sagnes, I
Citation: T. Brunhes et al., Electroluminescence of Ge/Si self-assembled quantum dots grown by chemicalvapor deposition, APPL PHYS L, 77(12), 2000, pp. 1822-1824
Transition from an antidot to a dot array in etched Si/SiGe heterostructures: Influence of the etch depth
Authors: Hameau, S Guldner, Y Ferreira, R Zanier, S Faini, G Cambril, E Campidelli, Y
Citation: S. Hameau et al., Transition from an antidot to a dot array in etched Si/SiGe heterostructures: Influence of the etch depth, PHYS REV B, 60(23), 1999, pp. 15965-15969
Growth kinetics and physical characterisation of Si1-xGexO2 films obtainedby plasma assisted oxidation
Authors: Busani, T Plantier, H Devine, RAB Hernandez, C Campidelli, Y
Citation: T. Busani et al., Growth kinetics and physical characterisation of Si1-xGexO2 films obtainedby plasma assisted oxidation, J NON-CRYST, 254, 1999, pp. 80-88
Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor
Authors: Hernandez, C Campidelli, Y Simon, D Bensahel, D Sagnes, I Patriarche, G Boucaud, P Sauvage, S
Citation: C. Hernandez et al., Ge Si self-assembled quantum dots grown on Si(001) in an industrial high-pressure chemical vapor deposition reactor, J APPL PHYS, 86(2), 1999, pp. 1145-1148
Growth and characterization of GeO2 films obtained by plasma anodization of epitaxial Ge films
Authors: Busani, T Plantier, H Devine, RAB Hernandez, C Campidelli, Y
Citation: T. Busani et al., Growth and characterization of GeO2 films obtained by plasma anodization of epitaxial Ge films, J APPL PHYS, 85(8), 1999, pp. 4262-4264
Risultati: 1-10 |