ACNP - Italian Periodicals Catalogue

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Results: 1-11 |

Results: 11

Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector

Authors: Li, T Carrano, JC Eiting, CJ Grudowski, PA Lambert, DJH Kwon, HK Dupuis, RD Campbell, JC

Citation: T. Li et al., Design of a resonant-cavity-enhanced p-i-n GaN/AlxGa1-xN photodetector, FIBER IN OP, 20(2), 2001, pp. 125-131

Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN

Authors: Wraback, M Shen, H Carrano, JC Collins, CJ Campbell, JC Dupuis, RD Schurman, MJ Ferguson, IT

Citation: M. Wraback et al., Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN, APPL PHYS L, 79(9), 2001, pp. 1303-1305

Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth

Authors: Wraback, M Shen, H Eiting, CJ Carrano, JC Dupuis, RD

Citation: M. Wraback et al., Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth, MRS I J N S, 5, 2000, pp. NIL_673-NIL_678

Low dark current GaN avalanche photodiodes

Authors: Yang, B Li, T Heng, K Collins, C Wang, S Carrano, JC Dupuis, RD Campbell, JC Schurman, MJ Ferguson, IT

Citation: B. Yang et al., Low dark current GaN avalanche photodiodes, IEEE J Q EL, 36(12), 2000, pp. 1389-1391

Time-resolved electroabsorption measurement of the electron velocity-fieldcharacteristic in GaN

Authors: Wraback, M Shen, H Carrano, JC Li, T Campbell, JC Schurman, MJ Ferguson, IT

Citation: M. Wraback et al., Time-resolved electroabsorption measurement of the electron velocity-fieldcharacteristic in GaN, APPL PHYS L, 76(9), 2000, pp. 1155-1157

GaN avalanche photodiodes

Authors: Carrano, JC Lambert, DJH Eiting, CJ Collins, CJ Li, T Wang, S Yang, B Beck, AL Dupuis, RD Campbell, JC

Citation: Jc. Carrano et al., GaN avalanche photodiodes, APPL PHYS L, 76(7), 2000, pp. 924-926

Improved detection of the invisible

Authors: Carrano, JC Li, T Grudowski, PA Dupuis, RD Campbell, JC

Citation: Jc. Carrano et al., Improved detection of the invisible, IEEE CIRC D, 15(5), 1999, pp. 15-24

Very high-speed ultraviolet photodetectors fabricated on GaN

Authors: Carrano, JC Li, T Eiting, CJ Dupuis, RD Campbell, JC

Citation: Jc. Carrano et al., Very high-speed ultraviolet photodetectors fabricated on GaN, J ELEC MAT, 28(3), 1999, pp. 325-333

Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors

Authors: Li, T Carrano, JC Campbell, JC Schurman, M Ferguson, I

Citation: T. Li et al., Analysis of external quantum efficiencies of GaN homojunction p-i-n ultraviolet photodetectors, IEEE J Q EL, 35(8), 1999, pp. 1203-1206

Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode

Authors: Li, T Beck, AL Collins, C Dupuis, RD Campbell, JC Carrano, JC Schurman, MJ Ferguson, IA

Citation: T. Li et al., Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode, APPL PHYS L, 75(16), 1999, pp. 2421-2423

Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode

Authors: Collins, CJ Li, T Beck, AL Dupuis, RD Campbell, JC Carrano, JC Schurman, MJ Ferguson, IA

Citation: Cj. Collins et al., Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode, APPL PHYS L, 75(14), 1999, pp. 2138-2140

Risultati: 1-11 |