Authors: Masri, P Moreaud, N Laridjani, MR Calas, J Averous, M Chaix, G Dollet, A Berjoan, R Dupuy, C

Citation: P. Masri et al., The physics of heteroepitaxy of 3C-SiC on Si: role of Ge in the optimization of the 3C-SiC/Si heterointerface, MAT SCI E B, 61-2, 1999, pp. 535-538