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Results:
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Results: 4
Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE
Authors:
Chaussende, D Ferro, G Monteil, Y
Citation:
D. Chaussende et al., Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE, J CRYST GR, 234(1), 2002, pp. 63-69
Thermochemistry of silicon carbide growth by chemical transport reactions
Authors:
Chaussende, D Ferro, G Monteil, Y Brylinski, C Bouix, J
Citation:
D. Chaussende et al., Thermochemistry of silicon carbide growth by chemical transport reactions, J MATER SCI, 36(2), 2001, pp. 335-342
Thermodynamical calculations on the chemical vapour transport of silicon carbide
Authors:
Chaussende, D Monteil, Y Aboughe-nze, P Brylinski, C Bouix, J
Citation:
D. Chaussende et al., Thermodynamical calculations on the chemical vapour transport of silicon carbide, MAT SCI E B, 61-2, 1999, pp. 98-101
Role of SIMOX defects on the structural properties of beta-SiC/SIMOX
Authors:
Ferro, G Planes, N Papaioannou, V Chaussende, D Monteil, Y Stoemenos, Y Camassel, J
Citation:
G. Ferro et al., Role of SIMOX defects on the structural properties of beta-SiC/SIMOX, MAT SCI E B, 61-2, 1999, pp. 586-592
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