Authors:
Takizawa, M
Nomura, I
Che, SB
Kikuchi, A
Shimomura, K
Kishino, K
Citation: M. Takizawa et al., MBE growth of BeZnCdSe quaternaries, MgSe/BeZnCdSe superlattice and quantum well structures on InP substrates, J CRYST GR, 227, 2001, pp. 660-664
Authors:
Takada, T
Che, SB
Nomura, I
Kikuchi, A
Shimomura, K
Kishino, K
Citation: T. Takada et al., Novel II-VI light emitting diodes fabricated on InP substrates applying wide-gap and highly p-dopable BeZnTe for p-cladding layers, PHYS ST S-A, 180(1), 2000, pp. 37-43
Authors:
Che, SB
Nomura, I
Shinozaki, W
Kikuchi, A
Shimomura, K
Kishino, K
Citation: Sb. Che et al., Wide bandgap over 3 eV and high p-doping BeZnTe grown on InP substrates bymolecular beam epitaxy, J CRYST GR, 214, 2000, pp. 321-324
Authors:
Shinozaki, W
Nomura, I
Shimbo, H
Hattori, H
Sano, T
Che, SB
Kikuchi, A
Shimomura, K
Kishino, K
Citation: W. Shinozaki et al., Growth and characterization of nitrogen-doped MgSe/ZnSeTe superlattice quasi-quaternary on InP substrates and fabrication of light emitting diodes, JPN J A P 1, 38(4B), 1999, pp. 2598-2602
Authors:
Nomura, I
Shinozaki, W
Hattori, H
Sano, T
Che, SB
Shimbo, H
Kikuchi, A
Shimomura, K
Kishino, K
Citation: I. Nomura et al., MBE growth of novel MgSe/ZnSeTe: NII-VI compound superlattice quasi-quaternaries on InP substrates and application to light-emitting diodes, J CRYST GR, 202, 1999, pp. 954-956