Authors: Heinke, H Kirchner, V Selke, H Chierchia, R Ebel, R Einfeldt, S Hommel, D

Citation: H. Heinke et al., X-ray scattering from GaN epitaxial layers - an example of highly anisotropic coherence, J PHYS D, 34(10A), 2001, pp. A25-A29

Authors: Bottcher, T Einfeldt, S Figge, S Chierchia, R Heinke, H Hommel, D Speck, JS

Citation: T. Bottcher et al., The role of high-temperature island coalescence in the development of stresses in GaN films, APPL PHYS L, 78(14), 2001, pp. 1976-1978

Authors: Allegrini, M Fuso, F Labardi, M Pardi, L Sbrana, F Mulloni, V Mazzoleni, C Chierchia, R Pavesi, L

Citation: M. Allegrini et al., Near-field optical investigation of porous silicon samples, PHIL MAG B, 80(4), 2000, pp. 611-621

Authors: Mulloni, V Chierchia, R Mazzoleni, C Pucker, G Pavesi, L Bellutti, P

Citation: V. Mulloni et al., Porous silicon optical devices and Si/SiO2 quantum wells: recent results, PHIL MAG B, 80(4), 2000, pp. 705-718

Authors: Gaburro, Z Bellutti, P Chierchia, R Mulloni, V Pavesi, L

Citation: Z. Gaburro et al., Light emitting diodes based on anodically oxidized silicon/porous silicon heterojunction, MAT SCI E B, 69, 2000, pp. 109-113

Authors: Pavesi, L Chierchia, R Bellutti, P Lui, A Fuso, F Labardi, M Pardi, L Sbrana, F Allegrini, M Trusso, S Vasi, C Ventura, PJ Costa, LC Carmo, MC Bisi, O

Citation: L. Pavesi et al., Light emitting porous silicon diode based on a silicon/porous silicon heterojunction, J APPL PHYS, 86(11), 1999, pp. 6474-6482