Authors:
Matsuzaki, Y
Yuasa, K
Shirakashi, J
Chilla, EK
Yamada, A
Konagai, M
Citation: Y. Matsuzaki et al., Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process, J CRYST GR, 202, 1999, pp. 656-659