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Authors: Matsuzaki, Y Yuasa, K Shirakashi, J Chilla, EK Yamada, A Konagai, M
Citation: Y. Matsuzaki et al., Nanofabrication of heavily doped p-type GaAs and n-type InGaP by atomic force microscope (AFM)-based surface oxidation process, J CRYST GR, 202, 1999, pp. 656-659
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