Authors: Choe, JS Park, SH Choe, BD Jeon, H

Citation: Js. Choe et al., Lateral oxidation of AlAs layers at elevated water vapour pressure using aclosed-chamber system, SEMIC SCI T, 15(10), 2000, pp. L35-L38

Authors: Kwon, YH Jeong, WG Cho, YH Choe, BD

Citation: Yh. Kwon et al., Effect of GaAsyP1-y(0 <= y < 1) interlayers on the structural, optical, and electrical characteristics of GaAs/InGaP heterojunction, APPL PHYS L, 76(17), 2000, pp. 2379-2381

Authors: Moon, CR Lim, H Choe, BD

Citation: Cr. Moon et al., Capacitance-voltage characteristics of quantum well structures, J KOR PHYS, 34, 1999, pp. S77-S80

Authors: Ryu, SW Jeong, WG Choe, BD

Citation: Sw. Ryu et al., Analysis of the performance of 1.55-mu m InGaAs-InP tensile strained quantum-well lasers, IEEE J Q EL, 35(8), 1999, pp. 1207-1212

Authors: Cho, YH Song, JJ Lim, H Choe, BD Lee, JI Kim, D

Citation: Yh. Cho et al., Recombination dynamics in n-AlxGa1-xAs/n-In0.5Ga0.5P type-II heterostructures, APPL PHYS L, 73(9), 1998, pp. 1245-1247