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Results: 1-8 |
Results: 8
Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition
Authors: Shalini, K Mane, AU Shivashankar, SA Rajeswari, M Choopun, S
Citation: K. Shalini et al., Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition, J CRYST GR, 231(1-2), 2001, pp. 242-247
Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thinfilms
Authors: Yang, W Vispute, RD Choopun, S Sharma, RP Venkatesan, T Shen, H
Citation: W. Yang et al., Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thinfilms, APPL PHYS L, 78(18), 2001, pp. 2787-2789
Superconducting cuprates and magnetoresistive manganites: similarities andcontrasts
Authors: Venkatesan, T Sharma, RP Zhao, YG Chen, ZY Lee, CH Cao, WL Li, JJ Drew, HD Ogale, SB Ramesh, R Rajeswari, M Wu, T Jin, I Choopun, S Johnson, M Chu, WK Baskaran, G
Citation: T. Venkatesan et al., Superconducting cuprates and magnetoresistive manganites: similarities andcontrasts, MAT SCI E B, 63(1-2), 1999, pp. 36-43
Pulsed laser deposition of titanium nitride films on sapphire
Authors: Talyansky, V Choopun, S Downes, MJ Sharma, RP Venkatesan, T Li, YX Salamanca-Riba, LG Wood, MC Lareau, RT Jones, KA
Citation: V. Talyansky et al., Pulsed laser deposition of titanium nitride films on sapphire, J MATER RES, 14(8), 1999, pp. 3298-3302
Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology
Authors: Madhukar, S Aggarwal, S Dhote, AM Ramesh, R Samavedam, SB Choopun, S Sharma, RP
Citation: S. Madhukar et al., Pulsed laser-ablation deposition of thin films of molybdenum silicide and its properties as a conducting barrier for ferroelectric random-access memory technology, J MATER RES, 14(3), 1999, pp. 940-947
Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials
Authors: Vispute, RD Choopun, S Enck, R Patel, A Talyansky, V Sharma, RP Venkatesan, T Sarney, WL Salamanca-Riba, L Andronescu, SN Iliadis, AA Jones, KA
Citation: Rd. Vispute et al., Pulsed laser deposition and processing of wide band gap semiconductors andrelated materials, J ELEC MAT, 28(3), 1999, pp. 275-286
Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C
Authors: Scozzie, CJ Lelis, AJ McLean, FB Vispute, RD Choopun, S Patel, A Sharma, RP Venkatesan, T
Citation: Cj. Scozzie et al., Leakage currents in high-quality pulsed-laser deposited aluminum nitride on 6H silicon carbide from 25 to 450 degrees C, J APPL PHYS, 86(7), 1999, pp. 4052-4054
Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire
Authors: Choopun, S Vispute, RD Noch, W Balsamo, A Sharma, RP Venkatesan, T Iliadis, A Look, DC
Citation: S. Choopun et al., Oxygen pressure-tuned epitaxy and optoelectronic properties of laser-deposited ZnO films on sapphire, APPL PHYS L, 75(25), 1999, pp. 3947-3949
Risultati: 1-8 |