Authors: Skorokhod, VV Titov, VP Churakov, MM

Citation: Vv. Skorokhod et al., Kinetics of disilicide layer growth at the interface of tungsten with molten copper, silver, and tin saturated with silicon, POWD MET ME, 38(11-12), 1999, pp. 608-609

Authors: Ivanov, MA Churakov, MM Glushchenko, VI

Citation: Ma. Ivanov et al., Description of the growth of a two-component layer with allowance for the diffusion and interface transport of atoms, FIZ METAL M, 88(2), 1999, pp. 12-22