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Results: 51-58/58
Authors:
Nee, TE
Yeh, NT
Lee, JM
Chyi, JI
Lee, CT
Citation: Te. Nee et al., High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 905-908
Authors:
Pan, JW
Chen, MH
Chyi, JI
Citation: Jw. Pan et al., High performance phosphorus-free 1.3 mu m AlGaInAs InP MQW lasers, J CRYST GR, 202, 1999, pp. 923-926
Authors:
Yeh, NT
Nee, TE
Chyi, JI
Citation: Nt. Yeh et al., Characterization of In0.5Ga0.5As quantum dot p-i-n structures with different matrices, J CRYST GR, 202, 1999, pp. 1168-1171
Authors:
Chang, MN
Hsieh, KC
Nee, TE
Chyi, JI
Citation: Mn. Chang et al., Effects of point defect distribution on arsenic precipitation in low-temperature grown III-V arsenides, J APPL PHYS, 86(5), 1999, pp. 2442-2447
Authors:
Chyi, JI
Chen, MH
Pan, JW
Shih, TT
Citation: Ji. Chyi et al., Improved temperature characteristics of 1.55 mu m InAlGaAs quantum well lasers with multiquantum barrier at p-cladding layer, ELECTR LETT, 35(15), 1999, pp. 1255-1257
Authors:
Chang, MN
Chuo, CC
Lu, CM
Hsieh, KC
Yeh, NT
Chyi, JI
Citation: Mn. Chang et al., Role of excess As in low-temperature grown GaAs subjected to BCl3 reactiveion etching, APPL PHYS L, 75(19), 1999, pp. 3032-3034
Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n(+) structure
Authors:
Hwang, JS
Hwang, WC
Yang, ZP
Chang, GS
Chyi, JI
Yeh, NT
Citation: Js. Hwang et al., Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n(+) structure, APPL PHYS L, 75(16), 1999, pp. 2467-2469
Authors:
Chang, MN
Yeh, NT
Lu, CM
Hsieh, KC
Chyi, JI
Citation: Mn. Chang et al., Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures, APPL PHYS L, 75(1), 1999, pp. 52-54