ACNP - Italian Periodicals Catalogue

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Results: 1-13 |

Results: 13

Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation

Authors: Corni, F Nobili, C Tonini, R Ottaviani, G Tonelli, M

Citation: F. Corni et al., Helium/deuterium coimplanted silicon: A thermal desorption spectrometry investigation, APPL PHYS L, 78(19), 2001, pp. 2870-2872

Formation of vacancy clusters and cavities in He-implanted silicon studiedby slow-positron annihilation spectroscopy

Authors: Brusa, RS Karwasz, GP Tiengo, N Zecca, A Corni, F Tonini, R Ottaviani, G

Citation: Rs. Brusa et al., Formation of vacancy clusters and cavities in He-implanted silicon studiedby slow-positron annihilation spectroscopy, PHYS REV B, 61(15), 2000, pp. 10154-10166

Thermal desorption spectra from cavities in helium-implanted silicon

Authors: Cerofolini, GF Calzolari, G Corni, F Frabboni, S Nobili, C Ottaviani, G Tonini, R

Citation: Gf. Cerofolini et al., Thermal desorption spectra from cavities in helium-implanted silicon, PHYS REV B, 61(15), 2000, pp. 10183-10193

Hydrogen and helium bubbles in silicon

Authors: Cerofolini, GF Corni, F Frabboni, S Nobili, C Ottaviani, G Tonini, R

Citation: Gf. Cerofolini et al., Hydrogen and helium bubbles in silicon, MAT SCI E R, 27(1-2), 2000, pp. 1-52

EPR study of He-implanted Si

Authors: Pivac, B Rakvin, B Tonini, R Corni, F Ottaviani, G

Citation: B. Pivac et al., EPR study of He-implanted Si, MAT SCI E B, 73(1-3), 2000, pp. 60-63

GISAXS study of defects in He implanted silicon

Authors: Dubcek, P Milat, O Pivac, B Bernstorff, S Amenitsch, H Tonini, R Corni, F Ottaviani, G

Citation: P. Dubcek et al., GISAXS study of defects in He implanted silicon, MAT SCI E B, 71, 2000, pp. 82-86

Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon

Authors: Gambetta, F Frabboni, S Tonini, R Corni, F

Citation: F. Gambetta et al., Large angle convergent beam electron diffraction strain measurements in high dose helium implanted silicon, MAT SCI E B, 71, 2000, pp. 87-91

Ultradense gas bubbles in hydrogen- or helium-implanted (or coimplanted) silicon

Authors: Cerofolini, GF Calzolari, G Corni, F Nobili, C Ottaviani, G Tonini, R

Citation: Gf. Cerofolini et al., Ultradense gas bubbles in hydrogen- or helium-implanted (or coimplanted) silicon, MAT SCI E B, 71, 2000, pp. 196-202

Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Authors: Corni, F Calzolari, G Gambetta, F Nobili, C Tonini, R Zapparoli, M

Citation: F. Corni et al., Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry, MAT SCI E B, 71, 2000, pp. 207-212

Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon

Authors: Rakvin, B Pivac, B Tonini, R Corni, F Ottaviani, G

Citation: B. Rakvin et al., Electron paramagnetic resonance study of S2 defects in hydrogen-implanted silicon, NUCL INST B, 170(1-2), 2000, pp. 125-133

He-implantation induced defects in Si studied by slow positron annihilation spectroscopy

Authors: Brusa, RS Karwasz, GP Tiengo, N Zecca, A Corni, F Calzolari, G Nobili, C

Citation: Rs. Brusa et al., He-implantation induced defects in Si studied by slow positron annihilation spectroscopy, J APPL PHYS, 85(4), 1999, pp. 2390-2397

Helium-implanted silicon: A study of bubble precursors

Authors: Corni, F Calzolari, G Frabboni, S Nobili, C Ottaviani, G Tonini, R Cerofolini, GF Leone, D Servidori, M Brusa, RS Karwasz, GP Tiengo, N Zecca, A

Citation: F. Corni et al., Helium-implanted silicon: A study of bubble precursors, J APPL PHYS, 85(3), 1999, pp. 1401-1408

High-dose helium-implanted single-crystal silicon: Annealing behavior

Authors: Tonini, R Corni, F Frabboni, S Ottaviani, G Cerofolini, GF

Citation: R. Tonini et al., High-dose helium-implanted single-crystal silicon: Annealing behavior, J APPL PHYS, 84(9), 1998, pp. 4802-4808

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