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Results: 26-33/33
Authors:
Niu, GF
Cressler, JD
Mathew, SJ
Subbanna, S
Citation: Gf. Niu et al., A total resistance slope-based effective channel mobility extraction method for deep submicrometer CMOS technology, IEEE DEVICE, 46(9), 1999, pp. 1912-1914
Authors:
Niu, GF
Ansley, WE
Zhang, SM
Cressler, JD
Webster, CS
Groves, RA
Citation: Gf. Niu et al., Noise parameter optimization of UHV/CVD SiGeHBT's for RF and microwave applications, IEEE DEVICE, 46(8), 1999, pp. 1589-1598
Authors:
Joseph, AJ
Cressler, JD
Richey, DM
Niu, GF
Citation: Aj. Joseph et al., Optimization of SiGeHBT's for operation at high current densities, IEEE DEVICE, 46(7), 1999, pp. 1347-1354
Authors:
Niu, GF
Cressler, JD
Gogineni, U
Joseph, AJ
Citation: Gf. Niu et al., A new common-emitter hybrid-pi small-signal equivalent circuit for bipolartransistors with significant neutral base recombination, IEEE DEVICE, 46(6), 1999, pp. 1166-1173
Authors:
Niu, GF
Cressler, JD
Zhang, SM
Gogineni, U
Ahlgren, DC
Citation: Gf. Niu et al., Measurement of collector-base junction avalanche multiplication effects inadvanced UHV/CVD SiGe HBT's, IEEE DEVICE, 46(5), 1999, pp. 1007-1015
Authors:
Mathew, SJ
Niu, GF
Dubbelday, WB
Cressler, JD
Citation: Sj. Mathew et al., Characterization and profile optimization of SiGe pFET's on silicon-on-sapphire, IEEE DEVICE, 46(12), 1999, pp. 2323-2332
Authors:
Niu, GF
Banerjee, G
Cressler, JD
Roldan, JM
Clark, SD
Ahlgren, DC
Citation: Gf. Niu et al., Electrical probing of surface and bulk traps in proton-irradiated gate-assisted lateral PNP transistors, IEEE NUCL S, 45(6), 1998, pp. 2361-2365
Authors:
Roldan, JM
Niu, GF
Ansley, WE
Cressler, JD
Clark, SD
Ahlgren, DC
Citation: Jm. Roldan et al., An investigation of the spatial location of proton-induced traps in SiGe HBTs, IEEE NUCL S, 45(6), 1998, pp. 2424-2429