Authors: Fadlallah, M Szewczyk, A Giannakopoulos, C Cretu, B Monsieur, F Devoivre, T Jomaah, J Ghibaudo, G

Citation: M. Fadlallah et al., Low frequency noise and reliability properties of 0.12 mu m CMOS devices with Ta2O5 as gate dielectrics, MICROEL REL, 41(9-10), 2001, pp. 1361-1366

Authors: Cretu, B Bontchacha, T Ghibaudo, G Balestra, F

Citation: B. Cretu et al., New ratio method for effective channel length and threshold voltage extraction in MOS transistors, ELECTR LETT, 37(11), 2001, pp. 717-719