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Results: 1-6 |
Results: 6

Authors: Wang, ZG Parker, CG Hodge, DW Croswell, RT Yang, N Misra, V Hauser, JR
Citation: Zg. Wang et al., Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks, IEEE ELEC D, 21(4), 2000, pp. 170-172

Authors: Croswell, RT Reisman, A Simpson, DL Temple, D Williams, CK
Citation: Rt. Croswell et al., Planarization processes and applications III. As-deposited and annealed film properties, J ELCHEM SO, 147(4), 2000, pp. 1513-1524

Authors: Simpson, DL Croswell, RT Reisman, A Williams, CK Temple, D
Citation: Dl. Simpson et al., Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films, J ELCHEM SO, 147(4), 2000, pp. 1560-1567

Authors: Croswell, RT Reisman, A Simpson, DL Temple, D Williams, CK
Citation: Rt. Croswell et al., Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5, J ELCHEM SO, 146(12), 1999, pp. 4569-4579

Authors: Simpson, DL Croswell, RT Reisman, A Temple, D Williams, CK
Citation: Dl. Simpson et al., Planarization processes and applications - I. Undoped GeO2-SiO2 glasses, J ELCHEM SO, 146(10), 1999, pp. 3860-3871

Authors: Simpson, DL Croswell, RT Reisman, A Temple, D Williams, CK
Citation: Dl. Simpson et al., Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes, J ELCHEM SO, 146(10), 1999, pp. 3872-3885
Risultati: 1-6 |